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BQ51050B 参数 Datasheet PDF下载

BQ51050B图片预览
型号: BQ51050B
PDF下载: 下载PDF文件 查看货源
内容描述: 高效率琦V1.1兼容无线电源接收器和电池充电器 [High-Efficiency Qi v1.1-Compliant Wireless Power Receiver and Battery Charger]
分类和应用: 电池无线
文件页数/大小: 31 页 / 2068 K
品牌: TI [ TEXAS INSTRUMENTS ]
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SLUSB42C JULY 2012REVISED FEBRUARY 2013  
TCOLD and THOT are the desired temperature thresholds in degrees Kelvin. Ro is the nominal resistance and β is  
the temperature coefficient of the NTC resistor. An example solution for part number ERT-JZEG103JA is:  
R2 = 7.81 kΩ  
R3 = 13.98 kΩ  
Where,  
TCOLD = 0°C  
THOT = 0°C  
β = 4500  
Ro = 10 kΩ  
The plot of the percent VTSB vs temperature is shown in Figure 23:  
Figure 23. Example Solution for Panasonic Part # ERT-JZEG103JA  
Figure 24 illustrates the periodic biasing scheme used for measuring the TS state. The TS_READ signal enables  
the TS bias voltage for 25 ms. During this period the TS comparators are read (each comparator has a 10 ms  
deglitch) and appropriate action is taken based on the temperature measurement. After this 25 ms period has  
elapsed the TS_READ signal goes low, which causes the TS-Bias pin to become high impedance. During the  
next 100 ms period the TS voltage is monitored and compared to 100 mV. If the TS voltage is greater than 100  
mV then a secondary device is driving the TS/CTRL pin and a CTRL = ‘1’ is detected.  
Figure 24. Timing Diagram for TS Detection Circuit  
Copyright © 2012–2013, Texas Instruments Incorporated  
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