欢迎访问ic37.com |
会员登录 免费注册
发布采购

BQ4015YMA-120N 参数 Datasheet PDF下载

BQ4015YMA-120N图片预览
型号: BQ4015YMA-120N
PDF下载: 下载PDF文件 查看货源
内容描述: 512Kx8非易失SRAM [512Kx8 Nonvolatile SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 518 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号BQ4015YMA-120N的Datasheet PDF文件第1页浏览型号BQ4015YMA-120N的Datasheet PDF文件第3页浏览型号BQ4015YMA-120N的Datasheet PDF文件第4页浏览型号BQ4015YMA-120N的Datasheet PDF文件第5页浏览型号BQ4015YMA-120N的Datasheet PDF文件第6页浏览型号BQ4015YMA-120N的Datasheet PDF文件第7页浏览型号BQ4015YMA-120N的Datasheet PDF文件第8页浏览型号BQ4015YMA-120N的Datasheet PDF文件第9页  
bq4015/Y  
As VCC falls past VPFD and approaches 3V, the control  
circuitry switches to the internal lithium backup supply,  
which provides data retention until valid VCC is applied.  
Functional Description  
When power is valid, the bq4015/Y operates as a stan-  
dard CMOS SRAM. During power-down and power-up  
cycles, the bq4015/Y acts as a nonvolatile memory, auto-  
matically protecting and preserving the memory con-  
tents.  
When VCC returns to a level above the internal backup  
cell voltage, the supply is switched back to VCC  
. After  
VCC ramps above the VPFD threshold, write-protection  
continues for a time tCER (120ms maximum) to allow for  
processor stabilization. Normal memory operation may  
resume after this time.  
Power-down/power-up control circuitry constantly moni-  
tors the VCC supply for a power-fail-detect threshold  
V
PFD. The bq4015 monitors for VPFD = 4.62V typical for  
The internal coin cells used by the bq4015/Y have an ex-  
tremely long shelf life and provide data retention for  
more than 10 years in the absence of system power.  
use in systems with 5% supply tolerance. The bq4015Y  
monitors for VPFD = 4.37V typical for use in systems  
with 10% supply tolerance.  
As shipped from Unitrode, the integral lithium cells of  
the MT-type module are electrically isolated from the  
memory. (Self-discharge in this condition is approxi-  
mately 0.5% per year.) Following the first application of  
When VCC falls below the VPFD threshold, the SRAM  
automatically write-protects the data. All outputs be-  
come high impedance, and all inputs are treated as  
“don’t care.” If a valid access is in process at the time of  
power-fail detection, the memory cycle continues to com-  
pletion. If the memory cycle fails to terminate within  
time tWPT, write-protection takes place.  
V
CC, this isolation is broken, and the lithium backup  
provides data retention on subsequent power-downs.  
The LIFETIME LITHIUM package option is shipped as  
two parts.  
Block Diagram  
OE  
A –A  
0
18  
1024K x 8  
SRAM  
WE  
Block  
DQ –DQ  
0
7
CE  
CON  
Power  
CE  
V
Power-Fail  
Control  
CC  
Lithium  
Cell  
BD4015.eps  
2
 复制成功!