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BQ4015YMA-120N 参数 Datasheet PDF下载

BQ4015YMA-120N图片预览
型号: BQ4015YMA-120N
PDF下载: 下载PDF文件 查看货源
内容描述: 512Kx8非易失SRAM [512Kx8 Nonvolatile SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 518 K
品牌: TI [ TEXAS INSTRUMENTS ]
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bq4015/Y  
Write Cycle (T = T  
, V  
OPR CCmin  
V  
CC  
V  
)
CCmax  
A
-70  
-85/-85N  
-120/-120N  
Min. Max. Min. Max. Min. Max.  
Symbol  
tWC  
Parameter  
Write cycle time  
Chip enable to end of write  
Units  
ns  
Conditions/Notes  
70  
65  
65  
-
-
-
85  
75  
75  
-
-
-
120  
100  
100  
-
-
-
tCW  
ns  
(1)  
(1)  
tAW  
Address valid to end of write  
ns  
Measured from address  
valid to beginning of  
write. (2)  
tAS  
Address setup time  
0
55  
5
-
-
-
-
-
-
-
0
65  
5
-
-
-
-
-
-
-
0
85  
5
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Measured from begin-  
ning of write to end of  
write. (1)  
tWP  
Write pulse width  
Measured from WE go-  
ing high to end of write  
cycle. (3)  
Write recovery time  
(write cycle 1)  
tWR1  
tWR2  
tDW  
tDH1  
Measured from CE going  
high to end of write cy-  
cle. (3)  
Write recovery time  
(write cycle 2)  
15  
30  
0
15  
35  
0
15  
45  
0
Measured to first low-  
to-high transition of ei-  
ther CE or WE.  
Data valid to end of write  
Measured from WE go-  
ing high to end of write  
cycle. (4)  
Data hold time  
(write cycle 1)  
Measured from CE going  
high to end of write cy-  
cle. (4)  
Data hold time  
(write cycle 2)  
tDH2  
10  
10  
10  
Write enabled to output in  
high Z  
I/O pins are in output  
state. (5)  
tWZ  
0
5
25  
-
0
0
30  
-
0
0
40  
-
ns  
ns  
Output active from end of  
write  
I/O pins are in output  
state. (5)  
tOW  
Notes:  
1. A write ends at the earlier transition of CE going high and WE going high.  
2. A write occurs during the overlap of a low CE and a low WE. A write begins at the later transition  
of CE going low and WE going low.  
3. Either tWR1 or tWR2 must be met.  
4. Either tDH1 or tDH2 must be met.  
5. If CE goes low simultaneously with WE going low or after WE going low, the outputs remain in  
high-impedance state.  
7
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