THCV231-Q_THCV236-Q_Rev.2.60_E
Absolute Maximum Ratings
Table 38. Absolute Maximum Ratings
Parameter
Supply Voltage(VDD,AVDD)
LVCMOS Input Voltage
Min
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-50
-55
-
Typ
Max
4.0
VDD+0.3
VDD+0.3
VDD+0.3
VDD+0.3
4.0
CAPINA+0.3
CAPINA+0.3
VDD+0.3
VDD+0.3
50
Unit
V
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LVCMOS Output Voltage
LVCMOS Bi-directional buffer Input Voltage
LVCMOS Bi-directional buffer Output Voltage
Open-Drain Output Voltage
CML Receiver Input Voltage
CML Transmitter Output Voltage
CML Bi-directional buffer Input Voltage
CML Bi-directional buffer Output Voltage
Output Current
V
V
mA
°C
°C
°C/sec
W
Storage temperature
Junction temperature
Reflow Peak Temperature/Time
Maximum Power Dissipation THCV231-Q@+25°C
Maximum Power Dissipation THCV236-Q@+25°C
125
125
260/10
3.2
4.0
-
-
-
W
Recommended Operating Conditions
Table 39. Recommended Operating Condition
Parameter
Supply Voltage(VDD,AVDD)
Operating Temperature
Min
1.7
-40
Typ
-
-
Max
3.6
105
Unit
V
°C
Electrical Specification
LVCMOS DC Specification
Table 40. LVCMOS DC Specification
Symbol
Parameter
Pin Type
Condition
Min
0.65×VDD
0.70×VDD
2.0
0.70×VDD
Typ
Max
VDD
VDD
VDD
VDD
Unit
V
V
V
V
V
V
V
V
VDD=1.7-2.0V
VDD=2.0-3.0V
VDD=3.0-3.6V
VDD=1.7-3.6V
VDD=1.7-2.0V
VDD=2.0-3.0V
VDD=3.0-3.6V
VDD=1.7-3.6V
VDD=1.7-3.6V
IOH=-4mA
-
-
-
-
-
-
-
-
I
IL,B
I
VIH
High Level Input Voltage
0
0
0
0
0.35×VDD
0.30×VDD
0.8
VIL
VOH
VOL
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
IL,B
O,B
0.30×VDD
VDD-0.45
-
-
-
VDD
0.45
0.2
V
V
V
VDD=1.7-3.6V
IOL=4mA
VDD=1.7-3.6V
IOL=2mA
O,B
BO
0
0
IIH
IIL
Input Leak Current High
Input Leak Current Low
Output Leak Current High
in Hi-Z State
Output Leak Current Low in
Hi-Z State
I,IL
I,IL
VIN=VDD
VIN=0V
-
-
-
10
-
uA
uA
-10
IOZH
IOZL
O,B,BO
O,B,BO
VIN=VDD
VIN=0V
-
-
-
10
10
uA
uA
-10
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