TSC80C31/80C51
Electrical Characteristics
* Notice
Absolute Maximum Ratings*
Stresses at or above those listed under “ Absolute Maximum Ratings”
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions may affect
device reliability.
Ambiant Temperature Under Bias :
C = commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
I = industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . –65°C to + 150°C
Voltage on VCC to VSS . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to + 7 V
Voltage on Any Pin to VSS . . . . . . . . . . . . . . . . . . . –0.5 V to V + 0.5 V
CC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W**
** This value is based on the maximum allowable die temperature and
the thermal resistance of the package
DC Parameters
TA = 0°C to 70°C ; VSS = 0 V ; VCC = 5 V ± 10 % ; F = 0 to 44 MHz
TA = –40°C + 85°C ; VSS = 0 V ; VCC = 5 V ± 10 % ; F = 0 to 44 MHz
Symbol
Parameter
Min
Typ (3)
Max
Unit
Test Conditions
VIL
VIH
Input Low Voltage
– 0.5
0.2 Vcc + 0.9
0.7 Vcc
0.2 Vcc – 0.1
Vcc + 0.5
V
V
V
Input High Voltage (Except XTAL and RST)
Input High Voltage (for XTAL and RST)
Output Low Voltage (Port 1, 2 and 3) (4)
VIH1
VOL
Vcc + 0.5
0.3
0.45
1.0
V
V
V
IOL = 100 µA
IOL = 1.6 mA (2)
IOL = 3.5 mA
VOL1 Output Low Voltage (Port 0, ALE, PSEN) (4)
0.3
0.45
1.0
V
V
V
IOL = 200 µA
IOL = 3.2 mA (2)
IOL = 7.0 mA
VOH
Output High Voltage Port 1, 2, 3
Vcc – 0.3
Vcc – 0.7
Vcc – 1.5
V
V
V
IOH = – 10 µA
IOH = – 30 µA
IOH = – 60 µA
VCC = 5 V ± 10 %
VOH1 Output High Voltage (Port 0, ALE, PSEN)
Vcc – 0.3
Vcc – 0.7
Vcc – 1.5
V
V
V
IOH = – 200 µA
IOH = – 3.2 mA
IOH = – 7.0 mA
VCC = 5 V ± 10 %
IIL
ILI
Logical 0 Input Current (Ports 1, 2 and 3)
Input leakage Current
– 50
± 10
– 650
30
µA
µA
µA
Vin = 0.45 V
0.45 < Vin < Vcc
Vin = 2.0 V
ITL
IPD
Logical 1 to 0 Transition Current (Ports 1, 2 and 3)
Power Down Current
5
µA Vcc = 2.0 V to 5.5 V (1)
KW
RRST RST Pulldown Resistor
50
90
200
10
CIO
ICC
Capacitance of I/O Buffer
pF
fc = 1 MHz, Ta = 25_C
Vcc = 5.5 V
Power Supply Current
Freq = 1 MHz Icc op
Icc idle
Freq = 6 MHz Icc op
0.7
0.5
4.2
1.4
1.8
1
9
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Icc idle
3.5
Freq ≥ 12 MHz Icc op max = 0.9 Freq (MHz) + 5
Icc idle max = 0.3 Freq (MHz) + 1.7
Freq ≤ 20 MHz Icc op typ = 0.7 Freq (MHz)
Freq ≥ 20 MHz Icc op typ = 0.5 Freq (MHz) + 4
Freq ≤ 20 MHz Icc idle typ = 0.16 Freq (MHz) + 0.4
Freq ≥ 20 MHz Icc idle typ = 0.12 Freq (MHz) + 1.2
MATRA MHS
9
Rev. E (14 Jan.97)
TEMIC [ TEMIC SEMICONDUCTORS ]
