4.4.4.4 Single event phenomena (SEP). SEP testing shall be required on class V devices (see 1.4 herein). SEP testing
shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as
approved by the qualifying activity at inital qualification and after any design or process changes which may affect the upset
or latchup characteristics. The recommended test conditions for SEP are as follows:
a. The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e.
0
angle 60 ). No shadowing of the ion beam due to fixturing or package related effects is allowed.
b. The fluence shall be 100 errors or 107 ions/cm2.
c. The flux shall be between 102 and 105 ions/cm2/s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d. The particle range shall be 20 microns in silicon.
e. The test temperature shall be +25 C and the maximum rated operating temperature 10 C.
f. Bias conditions shall be VCC = 4.5 V dc for the upset measurements and VCC = 5.5 V dc for the latchup
measurements.
4.5 Delta measurements for device class V. Delta measurements, as specified in table IIA, shall be made and recorded
before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical
parameters to be measured, with associated delta limits are listed in table IIB. The device manufacturer may, at his option,
either perform delta measurements or within 24 hours after life test perform final electrical parameter tests, subgroups 1, 7,
and 9.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record
for the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692,
Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of
users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0525.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone
(614) 692-0674.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535, MIL-HDBK-1331, and as follows:
C
C
Input and bi-directional output, terminal-to-GND capacitance.
IN, OUT .........................................
GND.................................................... Ground zero voltage potential.
I
I
I
..................................................... Supply current.
....................................................... Input current low.
....................................................... Input current high.
CC
IL
IH
SIZE
STANDARD
5962-89598
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
L
SHEET
41
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
