4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a. Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1005 of MIL-STD-883.
b. TA = +125 C, minimum.
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-
PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified
in test method 1005 of MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein).
a.End-point electrical parameters shall be as specified in table IIA herein.
b.For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All
device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25 C
5 C, after exposure, to the subgroups specified in table IIA herein.
c. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 condition A, and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater
than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the
pre-irradiation end-point electrical parameter limit at 25 C 5 C. Testing shall be performed at initial qualification and after
any design or process changes which may affect the RHA response of the device.
4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup shall not occur under any recommended operating
condition.
4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of MIL-
STD-883 and herein.
a.Transient dose rate upset testing for class M devices shall be performed at initial qualification and after any design or
process changes which may effect the RHA performance of the devices. Test 10 devices with 0 defects unless
otherwise specified.
b.Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved
radiation hardness assurance plan and MIL-PRF-38535. Device parametric parameters that influence upset
immunity shall be monitored at the wafer level in accordance with the wafer level hardness assurance plan and
MIL-PRF-38535.
c. The transient dose rate upset level shall be greater than or equal to 510 rads(Si)/s with a pulse width less than or
equal to 1.0 s.
SIZE
STANDARD
5962-89598
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
L
SHEET
40
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
