4.2.1 Additional criteria for device class M.
a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in)
electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein.
b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made
available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs,
biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015.
(1) Dynamic burn-in (method 1015 of MIL-STD-883, test condition D; for circuit, see 4.2.1b herein).
c. Interim and final electrical parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained
under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance
with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent
specified in test method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table IIA herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-
38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-
PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535
permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-
PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in
method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. Subgroups 5 and 6 of table I of method 5005 of MIL-STD-883 shall be omitted.
c. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V,
subgroups 7 and 8 shall include verifying the functionality of the device; these tests shall have been fault graded in
accordance with MIL-STD-883, test method 5012 (see 1.5 herein).
d. O/V (latch-up) tests shall be measured only for initial qualification and after any design or process changes which
may affect the performance of the device. For device class M, procedures and circuits shall be maintained under
document revision level control by the manufacturer and shall be made available to the preparing activity or
acquiring activity upon request. For device classes Q and V, the procedures and circuits shall be under the control
of the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the preparing
activity or acquiring activity upon request. Testing shall be on all pins, on five devices with zero failures. Latch-up
test shall be considered destructive. Information contained in JEDEC Standard EIA/JESD 78 may be used for
reference.
e. Subgroup 4 (C and C
IN OUT
measurements) shall be measured only for initial qualification and after any process or
design changes which may affect input or output capacitance. Capacitance shall be measured between the
designated terminal and GND at a frequency of 1 MHz. Sample size is 15 devices with no failures, and all input and
output terminals tested.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA
herein.
SIZE
STANDARD
5962-89598
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
L
SHEET
39
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
