12-BIT µP-COMPATIBLE
ANALOG-TO-DIGITAL CONVERTERS
1
2
3
4
5
6
7
8
TC7109
TC7109A
ELECTRICAL CHARACTERISTICS (Cont.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VREF
Ref Out Voltage
Referenced to V+, 25 kΩ
Between V+ and Ref Out
– 2.4
– 2.8
– 3.2
V
TCREF
Ref Out Temperature
Coefficient
25 kΩ Between V+ and Ref Out
0°C ≤ TA ≤ +70°C
—
80
—
—
ppm/°C
Digital
VOH
Output High Voltage
TC7109: IOUT = 100 µA
TC7109A: IOUT = 700 µA
Pins 3–16, 18, 19, 20
3.5
4.3
V
VOL
Output Low Voltage
IOUT = 1.6 mA
—
—
—
0.2
±0.01
5
0.4
±1
—
V
Output Leakage Current
Pins 3–16 High Impedance
Pins 18, 19, 20 VOUT = V+–3V
µA
µA
Control I/O
Pull-Up Current
Mode Input at GND
Control I/O Loading
Input High Voltage
HBEN, Pin 19; LBEN, Pin 18
—
—
—
50
—
pF
V
VIH
VIL
Pins 18–21, 26, 27
Referenced to GND
2.5
Input Low Voltage
Pins 18-21, 26, 27
Referenced to GND
Pins 26, 27; VOUT = V+–3V
Pins 17, 24; VOUT = V+–3V
—
—
—
1
V
Input Pull-Up Current
5
25
—
µA
µA
Input Pull-Down Current
Pin 21; VOUT = GND = +3V
VOUT = 2.5V
—
—
—
—
1
1
—
—
—
—
µA
mA
mA
mA
Oscillator Output Current, High
Oscillator Output Current, Low
VOUT = 2.5V
1.5
2
Buffered Oscillator Output
Current, High
VOUT = 2.5V
Buffered Oscillator Output
Current, Low
VOUT = 2.5V
—
5
—
—
mA
tW
Mode Input Pulse Width
60
—
nsec
HANDLINGPRECAUTIONS:ThesedevicesareCMOSandmustbehandledcorrectlytopreventdamage. Package
and store only in conductive foam, anti-static tubes, or other conducting material. Use proper anti-static handling
procedures. Do not connect in circuits under "power-on" conditions, as high transients may cause permanent
damage.
TELCOM SEMICONDUCTOR, INC.
3-93