12-BIT µP-COMPATIBLE
ANALOG-TO-DIGITAL CONVERTERS
TC7109
TC7109A
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ABSOLUTE MAXIMUM RATINGS*
Positive Supply Voltage (GND to V+) ..................... +6.2V
Negative Supply voltage (GND to V–) ....................... –9V
Analog Input Voltage (Low to High) (Note 1)....... V+ to V–
Reference Input Voltage (Low to High (Note 1) .. V+ to V–
Digital Input Voltage (Pins 2–27) (Note 2) ..... GND –0.3V
Power Dissipation, TA < 70°C, (Note 3)
CerDIP ............................................................. 2.29W
Plastic DIP ....................................................... 1.23W
PLCC ............................................................... 1.23W
PQFP ............................................................... 1.00W
Operating Temperature Range
NOTES: 1. Input voltages may exceed supply voltages if input current is
limited to ±100 µA.
2. Connecting any digital inputs or outputs to voltages greater
thanV+ orlessthanGNDmaycausedestructivedevicelatch-
up. Therefore, it is recommended that inputs from sources
other than the same power supply should not be applied to
the TC7109A before its power supply is established. In
multiple supply systems, the supply to the device should be
activated first.
Plastic Package (C) ...............................0°C to +70°C
Ceramic Package (I) ....................... – 25°C to +85°C
(M) ................... – 55°C to +125°C
3. Thislimitreferstothatofthepackageandwillnotoccurduring
normal operation.
Storage Temperature Range ............... – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
ELECTRICAL CHARACTERISTICS: All parameters with V+ = +5V, V– = –5V, GND = 0V, TA = +25°C,
unless otherwise indicated.
Symbol
Analog
Parameter
Test Conditions
Min
Typ
Max Unit
Overload Recovery Time
(TC7109A)
—
0
1
Measurement
Cycle
– 00008 ±00008 +00008 Octal Reading
Zero Input Reading
V
IN = 0V
Full Scale = 409.6 mV
IN = VREF
Ratio Metric Reading
V
37778
–1
37778
40008
40008 Octal Reading
VREF = 204.8 mV
NL
Nonlinearity (Max Deviation
From Best Straight Line Fit)
Full Scale = 409.6 mV to
2.048V Over Full Operating
Temperature Range
±0.2
+1
+1
Count
Count
Roll-Over Error (Difference in
Reading for Equal Positive and
Full Scale = 409.6 mV to
2.048V Over Full Operating
–1
±0.02
Negative Inputs Near (Full Scale) Temperature Range
CMRR
VCMR
eN
Input Common-Mode
Rejection Ratio
V
CM ±1V, VIN = 0V
—
V–+1.5
—
50
—
15
—
V+–1
—
µV/V
V
Full Scale = 409.6 mV
Common-Mode Voltage
Range
Input High, Input Low,
and Common Pins
Noise (P-P Value Not
VIN = 0V
µV
Exceeded 95% of Time)
Full Scale = 409.6 mV
IIN
Leakage Current at Input
VIN, All Packages: +25°C
—
1
20
100
2
10
100
250
5
pA
pA
pA
nA
C Device: 0°C ≤ TA ≤ +70°C
I Device: –25°C ≤ TA ≤ +85°C
M Device: –55°C ≤ TA ≤ +125°C
TCZS
TCFS
Zero Reading Drift
VIN = 0V
—
—
0.2
1
1
5
µV/°C
µV/°C
Scale-Factor
VIN = 408.9 mV = >77708
Temperature Coefficient
Reading, Ext Ref = 0 ppm/°C
I+
Supply Current
(V+ to GND)
Supply Current (V+ to V–)
VIN = 0V, Crystal Oscillator
3.58 MHz Test Circuit
—
—
700
700
1500
1500
µA
µA
IS
Pins 2–21, 25, 26, 27, 29 Open
3-92
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
