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S2008V12V 参数 Datasheet PDF下载

S2008V12V图片预览
型号: S2008V12V
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管产品目录 [Thyristor Product Catalog]
分类和应用:
文件页数/大小: 224 页 / 2673 K
品牌: TECCOR [ TECCOR ELECTRONICS ]
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AN1001  
Application Notes  
Electrical Characteristic Curves of Thyristors  
+I  
+I  
IT  
Voltage Drop (VT) at  
Specified Current (iT)  
IH  
RS  
Latching Current (IL)  
IS  
Off - State Leakage  
Current - (IDRM) at  
Specified VDRM  
IBO  
IDRM  
Reverse Leakage  
Current - (IRRM) at  
Specified VRRM  
-V  
+V  
Minimum Holding  
Current (IH  
)
VBO  
VS  
-V  
+V  
VT  
(VBO - VS)  
=
RS  
VDRM  
(IS - IBO  
)
Specified Minimum  
Off - State  
Blocking  
Specified Minimum  
Reverse Blocking  
Voltage (VRRM  
)
Voltage (VDRM  
)
-I  
Reverse  
Breakdown  
Voltage  
Forward  
Breakover  
Voltage  
Figure AN1001.15  
V-I Characteristics of a Sidac Chip  
-I  
Figure AN1001.12  
V-I Characteristics of SCR Device  
Methods of Switching on Thyristors  
Three general methods are available for switching thyristors to  
+I  
on-state condition:  
Application of gate signal  
Static dv/dt turn-on  
Voltage breakover turn-on  
Voltage Drop (VT) at  
Specified Current (iT  
)
Latching Current (IL)  
Off-state Leakage  
Current – (IDRM  
) at  
Specified VDRM  
Application Of Gate Signal  
Minimum Holding  
Current (IH  
)
Gate signal must exceed IGT and VGT requirements of the thyristor  
used. For an SCR (unilateral device), this signal must be positive  
with respect to the cathode polarity. A triac (bilateral device) can  
be turned on with gate signal of either polarity; however, different  
polarities have different requirements of IGT and VGT which must  
be satisfied. Since diacs and sidacs do not have a gate, this  
method of turn-on is not applicable. In fact, the single major  
application of diacs is to switch on triacs.  
-V  
+V  
Specified Minimum  
Off-state  
Blocking  
Voltage (VDRM  
)
Breakover  
Voltage  
-I  
Static dv/dt Turn-on  
Figure AN1001.13  
V-I Characteristics of Triac Device  
Static dv/dt turn-on comes from a fast-rising voltage applied  
across the anode and cathode terminals of an SCR or the main  
terminals of a triac. Due to the nature of thyristor construction, a  
small junction capacitor is formed across each PN junction.  
Figure AN1001.16 shows how typical internal capacitors are  
linked in gated thyristors.  
+I  
10 mA  
V  
Breakover  
Current  
I
BO  
-V  
+V  
Breakover  
Voltage  
V
BO  
Figure AN1001.16 Internal Capacitors Linked in Gated Thyristors  
-I  
Figure AN1001.14  
V-I Characteristics of Bilateral Trigger Diac  
http://www.teccor.com  
+1 972-580-7777  
AN1001 - 4  
©2002 Teccor Electronics  
Thyristor Product Catalog  
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