STM32F103x4, STM32F103x6
Table 28. Flash memory characteristics (continued)
Electrical characteristics
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
20
5
mA
mA
IDD
Supply current
Write / Erase modes
fHCLK = 72 MHz, VDD = 3.3 V
Power-down mode / Halt,
50
µA
V
VDD = 3.0 to 3.6 V
Vprog Programming voltage
2
3.6
1. Guaranteed by design, not tested in production.
Table 29. Flash memory endurance and data retention
Value
Symbol
Parameter
Conditions
Unit
Min(1) Typ
Max
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
NEND Endurance
kcycles
10
1 kcycle(2) at TA = 85 °C
30
10
20
tRET
Data retention 1 kcycle(2) at TA = 105 °C
Years
10 kcycles(2) at TA = 55 °C
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
●
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V and
DD
V
through a 100 pF capacitor, until a functional disturbance occurs. This test is
SS
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 30. They are based on the EMS levels and classes
defined in application note AN1709.
Doc ID 15060 Rev 3
49/80
STMICROELECTRONICS [ ST ]
