Electrical characteristics
STM32F103x4, STM32F103x6
5.3.12
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 34 are derived from tests
performed under the conditions summarized in Table 9. All I/Os are CMOS and TTL
compliant.
Table 34. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage
–0.5
0.8
V
Standard IO input high level
voltage
TTL ports
2
VDD+0.5
VIH
IO FT(1) input high level voltage
2
5.5V
VIL
Input low level voltage
–0.5
0.35 VDD
VDD+0.5
CMOS ports
V
VIH
Input high level voltage
0.65 VDD
Standard IO Schmitt trigger
voltage hysteresis(2)
200
mV
mV
Vhys
IO FT Schmitt trigger voltage
hysteresis(2)
(3)
5% VDD
VSS VIN VDD
Standard I/Os
1
3
Ilkg
Input leakage current (4)
µA
VIN= 5 V
I/O FT
Weak pull-up equivalent
resistor(5)
RPU
VIN VSS
VIN VDD
30
30
40
50
50
k
Weak pull-down equivalent
resistor(5)
RPD
CIO
40
5
k
I/O pin capacitance
pF
1. FT = Five-volt tolerant.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in
production.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable
PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order).
All I/Os are CMOS and TTL compliant (no software configuration required), their
characteristics consider the most strict CMOS-technology or TTL parameters:
●
For V :
IH
–
–
if V is in the [2.00 V - 3.08 V] range: CMOS characteristics but TTL included
DD
if V is in the [3.08 V - 3.60 V] range: TTL characteristics but CMOS included
DD
●
For V :
IL
–
–
if V is in the [2.00 V - 2.28 V] range: TTL characteristics but CMOS included
DD
if V is in the [2.28 V - 3.60 V] range: CMOS characteristics but TTL included
DD
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