Electrical characteristics
STM32F103x4, STM32F103x6
Table 26. Low-power mode wakeup timings
Symbol Parameter
Typ
Unit
(1)
Wakeup from Sleep mode
1.8
3.6
µs
tWUSLEEP
Wakeup from Stop mode (regulator in run mode)
(1)
µs
tWUSTOP
Wakeup from Stop mode (regulator in low power
mode)
5.4
50
(1)
Wakeup from Standby mode
µs
tWUSTDBY
1. The wakeup times are measured from the wakeup event to the point in which the user application code
reads the first instruction.
5.3.8
5.3.9
48/80
PLL characteristics
The parameters given in Table 27 are derived from tests performed under ambient
temperature and V supply voltage conditions summarized in Table 9.
DD
Table 27. PLL characteristics
Value
Symbol
Parameter
Unit
Min(1)
Typ
Max(1)
PLL input clock(2)
1
8.0
25
60
MHz
%
fPLL_IN
PLL input clock duty cycle
PLL multiplier output clock
PLL lock time
40
16
fPLL_OUT
tLOCK
72
MHz
µs
200
300
Jitter
Cycle-to-cycle jitter
ps
1. Based on characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT
.
Memory characteristics
Flash memory
The characteristics are given at T = –40 to 105 °C unless otherwise specified.
A
Table 28. Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
tprog
16-bit programming time TA–40 to +105 °C
40
20
20
52.5
70
40
40
µs
ms
ms
tERASE Page (1 KB) erase time TA –40 to +105 °C
tME
Mass erase time
TA –40 to +105 °C
Doc ID 15060 Rev 3
STMICROELECTRONICS [ ST ]
