STM32F405xx, STM32F407xx
Symbol
Electrical characteristics
Table 39. Flash memory programming (continued)
Parameter
Conditions
Min(1) Typ Max(1) Unit
Program/eraseparallelism
(PSIZE) = x 8
-
-
-
-
-
-
-
-
-
1200 2400
Program/eraseparallelism
(PSIZE) = x 16
tERASE64KB Sector (64 KB) erase time
700
550
2
1400
1100
4
ms
Program/eraseparallelism
(PSIZE) = x 32
Program/eraseparallelism
(PSIZE) = x 8
Program/eraseparallelism
(PSIZE) = x 16
tERASE128KB Sector (128 KB) erase time
1.3
1
2.6
2
s
Program/eraseparallelism
(PSIZE) = x 32
Program/eraseparallelism
(PSIZE) = x 8
16
11
8
32
Program/eraseparallelism
(PSIZE) = x 16
tME
Mass erase time
22
s
Program/eraseparallelism
(PSIZE) = x 32
16
32-bit program operation
16-bit program operation
8-bit program operation
2.7
2.1
1.8
-
-
-
3.6
3.6
3.6
V
V
V
Vprog
Programming voltage
1. Based on characterization, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
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