Electrical characteristics
STM32F405xx, STM32F407xx
Figure 36. PLL output clock waveforms in down spread mode
Frequency (PLL_OUT)
F0
2 x md
Time
tmode
2 x tmode
ai17292
5.3.12
Memory characteristics
Flash memory
The characteristics are given at T = –40 to 105 °C unless otherwise specified.
A
The devices are shipped to customers with the Flash memory erased.
Table 38. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Write / Erase 8-bit mode, VDD = 1.8 V
Write / Erase 16-bit mode, VDD = 2.1 V
Write / Erase 32-bit mode, VDD = 3.3 V
-
-
-
5
8
-
-
-
IDD
Supply current
mA
12
Table 39. Flash memory programming
Symbol
Parameter
Conditions
Min(1) Typ Max(1) Unit
Program/eraseparallelism
(PSIZE) = x 8/16/32
tprog
Word programming time
-
-
-
-
16
100(2) µs
800
Program/eraseparallelism
(PSIZE) = x 8
400
300
250
Program/eraseparallelism
(PSIZE) = x 16
tERASE16KB Sector (16 KB) erase time
600
500
ms
Program/eraseparallelism
(PSIZE) = x 32
104/185
DocID022152 Rev 4
STMICROELECTRONICS [ ST ]
