STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
5.3.9
Memory characteristics
Flash memory
The characteristics are given at T = −40 to 105 °C unless otherwise specified.
A
Table 28. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1) Unit
tprog
Word programming time TA = −40 to +105 °C
40
20
20
52.5
70
40
40
µs
ms
ms
tERASE Page (2 KB) erase time TA = −40 to +105 °C
tME
Mass erase time
Supply current
TA = −40 to +105 °C
Read mode
fHCLK = 72 MHz with 2 wait
28
mA
states, VDD = 3.3 V
Write mode
7
5
mA
mA
fHCLK = 72 MHz, VDD = 3.3 V
IDD
Erase mode
fHCLK = 72 MHz, VDD = 3.3 V
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
V
Vprog Programming voltage
2
3.6
1. Values based on characterization and not tested in production.
Table 29. Flash memory endurance and data retention
Value
Typ
Symbol
Parameter
Conditions
Unit
Min(1)
Max
TBD(2)
30
NEND Endurance
kcycles
Years
TA = 85 °C, 1000 cycles
tRET
Data retention
TA = 105 °C, 1000
cycles
10
1. Values based on characterization not tested in production.
2. TBD = to be determined.
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