STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
5.3.7
Internal clock source characteristics
The parameters given in Table 24 are derived from tests performed under ambient
temperature and V supply voltage conditions summarized in Table 9.
DD
High-speed internal (HSI) RC oscillator
(1)
Table 24. HSI oscillator characteristics
Symbol
Parameter
Frequency
Conditions
Min
Typ
Max
Unit
fHSI
8
MHz
%
TA = –40 to 105 °C
TA = 25°C
3(2)
2
ACCHSI Accuracy of HSI oscillator
tsu(HSI) HSI oscillator start up time
1
%
1
2
µs
HSI oscillator power
IDD(HSI)
80
100
µA
consumption
1.
VDD = 3.3 V, TA = −40 to 105 °C unless otherwise specified.
2. Values based on device characterization, not tested in production.
LSI low speed internal RC oscillator
(1)
Table 25. LSI oscillator characteristics
Min(2)
Symbol
Parameter
Frequency
Conditions
Typ
Max
Unit
fLSI
30
40
60
85
kHz
µs
tsu(LSI) LSI oscillator startup time
LSI oscillator power
IDD(LSI)
0.65
1.2
µA
consumption
1. VDD = 3 V, TA = −40 to 105 °C unless otherwise specified.
2. Value based on device characterization, not tested in production.
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