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STM32F103RC 参数 Datasheet PDF下载

STM32F103RC图片预览
型号: STM32F103RC
PDF下载: 下载PDF文件 查看货源
内容描述: 基于ARM的高性能线的32位MCU,具有高达512 KB的闪存, USB , CAN ,11个定时器,3个ADC和13通信接口 [Performance line, ARM-based 32-bit MCU with up to 512 KB Flash, USB, CAN, 11 timers, 3 ADCs and 13 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 118 页 / 1231 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM32F103xC, STM32F103xD, STM32F103xE  
Wakeup time from low-power mode  
The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC  
oscillator. The clock source used to wake up the device depends from the current operating  
mode:  
Stop or Standby mode: the clock source is the RC oscillator  
Sleep mode: the clock source is the clock that was set before entering Sleep mode.  
All timings are derived from tests performed under ambient temperature and V supply  
DD  
voltage conditions summarized in Table 9.  
Table 26. Low-power mode wakeup timings  
Symbol  
Parameter  
Conditions  
Typ Unit  
(1)  
Wakeup from Sleep mode  
Wakeup on HSI RC clock  
1.8  
3.6  
µs  
tWUSLEEP  
Wakeup from Stop mode  
(regulator in run mode)  
HSI RC wakeup time = 2 µs  
(1)  
µs  
tWUSTOP  
HSI RC wakeup time = 2 µs,  
Regulator wakeup from LP mode  
time = 5 µs  
Wakeup from Stop mode  
(regulator in low power mode)  
5.4  
50  
HSI RC wakeup time = 2 µs,  
Regulator wakeup from power down  
time = 38 µs  
(1)  
Wakeup from Standby mode  
µs  
tWUSTDBY  
1. The wakeup times are measured from the wakeup event to the point in which the user application code  
reads the first instruction.  
5.3.8  
PLL characteristics  
The parameters given in Table 27 are derived from tests performed under ambient  
temperature and V supply voltage conditions summarized in Table 9.  
DD  
Table 27. PLL characteristics  
Value  
Symbol  
Parameter  
Test conditions  
Unit  
Min  
Typ  
Max(1)  
PLL input clock  
8.0  
MHz  
%
fPLL_IN  
PLL input clock duty cycle  
PLL multiplier output clock  
PLL lock time  
40  
16  
60  
72  
fPLL_OUT  
tLOCK  
MHz  
µs  
200  
1. Data based on device characterization, not tested in production.  
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