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M27C2001-12F1X 参数 Datasheet PDF下载

M27C2001-12F1X图片预览
型号: M27C2001-12F1X
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 256Kb的×8) UV EPROM和OTP EPROM [2 Mbit (256Kb x 8) UV EPROM and OTP EPROM]
分类和应用: 存储内存集成电路可编程只读存储器电动程控只读存储器
文件页数/大小: 16 页 / 115 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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M27C2001
Table 2. Absolute Maximum Ratings
(1)
Symbol
T
A
T
BIAS
T
STG
V
IO (2)
V
CC
V
A9 (2)
V
PP
Parameter
Ambient Operating Temperature
(3)
Temperature Under Bias
Storage Temperature
Input or Output Voltage (except A9)
Supply Voltage
A9 Voltage
Program Supply Voltage
Value
–40 to 125
–50 to 125
–65 to 150
–2 to 7
–2 to 7
–2 to 13.5
–2 to 14
Unit
°C
°C
°C
V
V
V
V
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V
CC
+0.5V with possible overshoot to V
CC
+2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
Mode
Read
Output Disable
Program
Verify
Program Inhibit
Standby
Electronic Signature
Note: X = V
IH
or V
IL
, V
ID
= 12V
±
0.5V.
E
V
IL
V
IL
V
IL
V
IL
V
IH
V
IH
V
IL
G
V
IL
V
IH
V
IH
V
IL
X
X
V
IL
P
X
X
V
IL
Pulse
V
IH
X
X
V
IH
A9
X
X
X
X
X
X
V
ID
V
PP
V
CC
or V
SS
V
CC
or V
SS
V
PP
V
PP
V
PP
V
CC
or V
SS
V
CC
Q0-Q7
Data Out
Hi-Z
Data In
Data Out
Hi-Z
Hi-Z
Codes
Table 4. Electronic Signature
Identifier
Manufacturer’s Code
Device Code
A0
V
IL
V
IH
Q7
0
0
Q6
0
1
Q5
1
1
Q4
0
0
Q3
0
0
Q2
0
0
Q1
0
0
Q0
0
1
Hex Data
20h
61h
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
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