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M27C2001-12F1X 参数 Datasheet PDF下载

M27C2001-12F1X图片预览
型号: M27C2001-12F1X
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 256Kb的×8) UV EPROM和OTP EPROM [2 Mbit (256Kb x 8) UV EPROM and OTP EPROM]
分类和应用: 存储内存集成电路可编程只读存储器电动程控只读存储器
文件页数/大小: 16 页 / 115 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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M27C2001
Table 9. Programming Mode AC Characteristics
(1)
(T
A
= 25
°C;
V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
I
LI
I
CC
I
PP
V
IL
V
IH
V
OL
V
OH
V
ID
Parameter
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
I
OL
= 2.1mA
I
OH
= –400µA
2.4
11.5
12.5
E = V
IL
–0.3
2
Test Condition
0
V
IN
V
IH
Min
Max
±10
50
50
0.8
V
CC
+ 0.5
0.4
Unit
µA
mA
mA
V
V
V
V
V
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. Programming Mode AC Characteristics
(1)
(T
A
= 25
°C;
V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
t
AVPL
t
QVPL
t
VPHPL
t
VCHPL
t
ELPL
t
PLPH
t
PHQX
t
QXGL
t
GLQV
t
GHQZ (2)
t
GHAX
Alt
t
AS
t
DS
t
VPS
t
VCS
t
CES
t
PW
t
DH
t
OES
t
OE
t
DFP
t
AH
Parameter
Address Valid to Program Low
Input Valid to Program Low
V
PP
High to Program Low
V
CC
High to Program Low
Chip Enable Low to Program Low
Program Pulse Width
Program High to Input Transition
Input Transition to Output Enable Low
Output Enable Low to Output Valid
Output Enable High to Output Hi-Z
Output Enable High to Address
Transition
0
0
Test Condition
Min
2
2
2
2
2
95
2
2
100
130
105
Max
Unit
µs
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
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