M25PE10, M25PE20
Table 7. Power-Up Timing and V Threshold
WI
Symbol
Parameter
Min.
30
Max.
Unit
µs
1
V
(min) to S low
tVSL
CC
1
Time delay before the first Write, Program or Erase instruction
Write Inhibit Voltage
1
10
ms
V
tPUW
1
1.5
2.5
VWI
Note: 1. These parameters are characterized only, over the temperature range –40°C to +85°C.
INITIAL DELIVERY STATE
The device is delivered with the memory array
erased: all bits are set to 1 (each Byte contains
FFh). All usable Status Register bits are 0.
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 8. Absolute Maximum Ratings
Symbol
Parameter
Min.
Max.
Unit
°C
°C
V
T
Storage Temperature
–65
150
STG
1
TLEAD
VIO
Lead Temperature during Soldering
Input and Output Voltage (with respect to Ground)
Supply Voltage
See note
–0.6
–0.6
4.0
4.0
V
V
CC
2
VESD
–2000
2000
V
Electrostatic Discharge Voltage (Human Body model)
®
Note: 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK 7191395 specification, and
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω)
25/37
STMICROELECTRONICS [ ST ]
