16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
SST34HF1621 / SST34HF1641
Data Sheet
AC CHARACTERISTICS
TABLE 12: SRAM READ CYCLE TIMING PARAMETERS
SST34HF1621/1641-70
SST34HF1621/1641-90
Symbol
TRCS
Parameter
Min
Max
Min
Max
Units
ns
Read Cycle Time
70
90
TAAS
Address Access Time
70
70
35
70
90
90
45
90
ns
TBES
Bank Enable Access Time
Output Enable Access Time
UBS#, LBS# Access Time
BES# to Active Output
ns
TOES
ns
TBYES
ns
1
TBLZS
0
0
0
0
0
0
ns
1
TOLZS
Output Enable to Active Output
UBS#, LBS# to Active Output
BES# to High-Z Output
ns
1
TBYLZS
ns
1
TBHZS
25
25
35
35
35
45
ns
1
TOHZS
Output Disable to High-Z Output
UBS#, LBS# to High-Z Output
Output Hold from Address Change
ns
1
TBYHZS
ns
TOHS
10
10
ns
T12.3 523
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 13: SRAM WRITE CYCLE TIMING PARAMETERS
SST34HF1621/1641-70
SST34HF1621/1641-90
Symbol
TWCS
TBWS
Parameter
Min
70
60
60
0
Max
Min
90
80
80
0
Max
Units
Write Cycle Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Bank Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
TAWS
TASTS
TWPS
Write Pulse Width
60
0
80
0
TWRS
TBYWS
TODWS
TOEWS
TDSS
Write Recovery Time
UBS#, LBS# to End-of-Write
Output Disable from WE# Low
Output Enable from WE# High
Data Set-up Time
60
80
30
40
0
30
0
0
40
0
TDHS
Data Hold from Write Time
ns
T13.3 523
©2001 Silicon Storage Technology, Inc.
S71172-05-000 10/01 523
14
SST [ SILICON STORAGE TECHNOLOGY, INC ]
