16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
SST34HF1621 / SST34HF1641
Data Sheet
TABLE 8: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V)
Limits
Symbol Parameter
Min
Max Units Test Conditions
Address input=VIL/VIH, at f=1/TRC Min,
IDD
Active VDD Current
VDD=VDD Max, all DQs open
Read
Flash
OE#=VIL, WE#=VIH
35
20
60
mA
mA
mA
BEF#=VIL, BES1#=VIH, or BES2=VIL
BEF#=VIH, BES1#=VIL , BES2=VIH
BEF#=VIH, BES1#=VIL , BES2=VIH
SRAM
Concurrent Operation
Write1
Flash
40
20
mA
mA
BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH
BEF#=VIH, BES1#=VIL , BES2=VIH
SRAM
ISB
Standby VDD Current 3.0V
3.3V
40
75
µA
µA
VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VILC
IALP
Auto Low Power Mode 3.0V
3.3V
Reset VDD Current
40
75
30
µA
µA
µA
VDD=VDD Max, BEF#=VILC, WE#=VIHC,
All I/O=VILC/VIHC
Reset=VSS 0.3V
IRT
ILI
Input Leakage Current
Output Leakage Current
Input Low Voltage
1
1
µA
µA
V
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
ILO
VIL
0.8
0.3
VILC
VIH
Input Low Voltage (CMOS)
Input High Voltage
V
VDD=VDD Max
0.7 VDD
VDD-0.3
V
VDD=VDD Max
VIHC
VOLF
VOHF
VOLS
VOHS
Input High Voltage (CMOS)
Flash Output Low Voltage
Flash Output High Voltage
SRAM Output Low Voltage
SRAM Output High Voltage
V
VDD=VDD Max
0.2
0.4
V
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
IOL =1 mA, VDD=VDD Min
IOH =-500 µA, VDD=VDD Min
VDD-0.2
2.2
V
V
V
T8.6 523
1. IDD active while Erase or Program is in progress.
©2001 Silicon Storage Technology, Inc.
S71172-05-000 10/01 523
12
SST [ SILICON STORAGE TECHNOLOGY, INC ]
