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SST25VF016B_11 参数 Datasheet PDF下载

SST25VF016B_11图片预览
型号: SST25VF016B_11
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位的SPI串行闪存 [16 Mbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 31 页 / 3300 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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16 Mbit SPI Serial Flash  
SST25VF016B  
A Microchip Technology Company  
Data Sheet  
Instructions  
Instructions are used to read, write (Erase and Program), and configure the SST25VF016B. The  
instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to execut-  
ing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, Write-  
Status-Register, or Chip-Erase instructions, the Write-Enable (WREN) instruction must be executed  
first. The complete list of instructions is provided in Table 5. All instructions are synchronized off a high  
to low transition of CE#. Inputs will be accepted on the rising edge of SCK starting with the most signif-  
icant bit. CE# must be driven low before an instruction is entered and must be driven high after the last  
bit of the instruction has been shifted in (except for Read, Read-ID, and Read-Status-Register instruc-  
tions). Any low to high transition on CE#, before receiving the last bit of an instruction bus cycle, will  
terminate the instruction in progress and return the device to standby mode. Instruction commands  
(Op Code), addresses, and data are all input from the most significant bit (MSB) first.  
Table 5: Device Operation Instructions  
Address Dummy  
Data  
Maximum  
Instruction  
Description  
Op Code Cycle1  
0000 0011b (03H)  
0000 1011b (0BH)  
Cycle(s)2 Cycle(s) Cycle(s) Frequency  
Read  
Read Memory at 25 MHz  
Read Memory at 80 MHz  
3
3
0
1
1 to  
1 to ∞  
25 MHz  
80 MHz  
High-Speed  
Read  
4 KByte Sec-  
tor-Erase3  
Erase 4 KByte of  
memory array  
0010 0000b (20H)  
0101 0010b (52H)  
1101 1000b (D8H)  
3
3
3
0
0
0
0
0
0
0
0
0
80 MHz  
80 MHz  
80 MHz  
80 MHz  
32 KByte  
Erase 32 KByte block  
of memory array  
Block-Erase4  
64 KByte  
Erase 64 KByte block  
of memory array  
Block-Erase5  
Chip-Erase  
Erase Full Memory Array  
0110 0000b (60H)  
or  
1100 0111b (C7H)  
Byte-Program To Program One Data Byte 0000 0010b (02H)  
3
3
0
0
1
80 MHz  
80 MHz  
AAI-Word-Pro- Auto Address Increment  
1010 1101b (ADH)  
2 to ∞  
gram6  
Programming  
RDSR7  
Read-Status-Register  
0000 0101b (05H)  
0
0
0
0
1 to ∞  
0
80 MHz  
80 MHz  
EWSR  
Enable-Write-Status-Reg- 0101b 0000b  
ister  
(50H)  
WRSR  
WREN  
WRDI  
RDID8  
Write-Status-Register  
Write-Enable  
Write-Disable  
Read-ID  
0000 0001b (01H)  
0000 0110b (06H)  
0000 0100b (04H)  
0
0
0
3
0
0
0
0
1
0
80 MHz  
80 MHz  
80 MHz  
80 MHz  
0
1001 0000b (90H)  
or  
1 to ∞  
1010 1011b (ABH)  
JEDEC-ID  
EBSY  
JEDEC ID read  
1001 1111b (9FH)  
0
0
0
0
3 to ∞  
0
80 MHz  
80 MHz  
Enable SO to output RY/BY# 0111 0000b (70H)  
status during AAI program-  
ming  
DBSY  
Disable SO as RY/BY#  
status during AAI program-  
ming  
1000 0000b (80H)  
0
0
0
80 MHz  
T5.0 1271  
1. One bus cycle is eight clock periods.  
©2011 Silicon Storage Technology, Inc.  
S71271-04-000  
01/11  
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