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SST25VF016B_11 参数 Datasheet PDF下载

SST25VF016B_11图片预览
型号: SST25VF016B_11
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位的SPI串行闪存 [16 Mbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 31 页 / 3300 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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16 Mbit SPI Serial Flash  
SST25VF016B  
A Microchip Technology Company  
Data Sheet  
4-KByte Sector-Erase  
The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase  
instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-  
Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any com-  
mand sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, fol-  
lowed by address bits [A23-A0]. Address bits [AMS-A12] (AMS = Most Significant address) are used to  
determine the sector address (SAX), remaining address bits can be VIL or VIH. CE# must be driven high  
before the instruction is executed. The user may poll the Busy bit in the software status register or wait  
TSE for the completion of the internal self-timed Sector-Erase cycle. See Figure 12 for the Sector-  
Erase sequence.  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
8
15 16  
23  
31  
24  
MODE 0  
SCK  
20  
ADD.  
MSB  
ADD.  
ADD.  
SI  
MSB  
HIGH IMPEDANCE  
SO  
1271 SecErase.0  
Figure 12:Sector-Erase Sequence  
©2011 Silicon Storage Technology, Inc.  
S71271-04-000  
01/11  
15  
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