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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
bit programming, a modified programming method is required; please contact  
your local Spansion representative. Any bit in a write buffer address range  
cannot be programmed from “0” back to a “1.” Attempting to do so may  
cause the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate  
the operation was successful. However, a succeeding read will show that the data  
is still “0.Only erase operations can convert a “0” to a “1.”  
Accelerated Program  
The device offers accelerated program operations through the WP#/ACC or ACC  
pin depending on the particular product. When the system asserts VHH on the  
WP#/ACC or ACC pin. The device uses the higher voltage on the WP#/ACC or ACC  
pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH  
for operations other than accelerated programming, or device damage may re-  
sult. WP# has an internal pullup; when unconnected, WP# is at VIH  
.
Figure 3 illustrates the algorithm for the program operation. Refer to the Erase  
and Program Operations–“AC Characteristics” section on page 67 section for pa-  
rameters, and Figure 14 for timing diagrams.  
48  
S71GL032A Based MCPs  
S71GL032A_00_A0 March 31, 2005  
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