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S29PL127J 参数 Datasheet PDF下载

S29PL127J图片预览
型号: S29PL127J
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 3.0伏只,同步读/写闪存增强型VersatileIO控制 [CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control]
分类和应用: 闪存
文件页数/大小: 106 页 / 2005 K
品牌: SPANSION [ SPANSION ]
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P R E L I M I N A R Y  
Requirements for Reading Array Data  
To read array data from the outputs, the system must drive the OE# and appro-  
priate CE# pins (For PL129J - CE1#/CE2# pins) to VIL. In PL129J, CE1# and  
CE2# are the power control and select the lower (CE1#) or upper (CE2#) halves  
of the device. CE# is the power control. OE# is the output control and gates array  
data to the output pins. WE# should remain at VIH  
.
The internal state machine is set for reading array data upon device power-up,  
or after a hardware reset. This ensures that no spurious alteration of the memory  
content occurs during the power transition. No command is necessary in this  
mode to obtain array data. Standard microprocessor read cycles that assert valid  
addresses on the device address inputs produce valid data on the device data  
outputs. Each bank remains enabled for read access until the command register  
contents are altered.  
Refer to Table 33 for timing specifications and to Figure 11 for the timing diagram.  
ICC1 in the DC Characteristics table represents the active current specification for  
reading array data.  
Random Read (Non-Page Read)  
Address access time (tACC) is equal to the delay from stable addresses to valid  
output data. The chip enable access time (tCE) is the delay from the stable ad-  
dresses and stable CE# to valid data at the output inputs. The output enable  
access time is the delay from the falling edge of the OE# to valid data at the out-  
put inputs (assuming the addresses have been stable for at least tACC–tOE time).  
Page Mode Read  
The device is capable of fast page mode read and is compatible with the page  
mode Mask ROM read operation. This mode provides faster read access speed for  
random locations within a page. Address bits Amax–A3 select an 8 word page,  
and address bits A2–A0 select a specific word within that page. This is an asyn-  
chronous operation with the microprocessor supplying the specific word location.  
The random or initial page access is tACC or tCE and subsequent page read ac-  
cesses (as long as the locations specified by the microprocessor falls within that  
page) is equivalent to tPACC. When CE# (CE1# and CE#2 in PL129J) is deasserted  
(=VIH), the reassertion of CE# (CE1# or CE#2 in PL129J) for subsequent access  
has access time of tACC or tCE. Here again, CE# (CE1# /CE#2 in PL129J)selects  
the device and OE# is the output control and should be used to gate data to the  
output inputs if the device is selected. Fast page mode accesses are obtained by  
keeping Amax–A3 constant and changing A2–A0 to select the specific word within  
that page.  
Table 3. Page Select  
Word  
A2  
0
A1  
0
A0  
0
Word 0  
Word 1  
Word 2  
Word 3  
Word 4  
Word 5  
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
22  
S29PL127J/S29PL129J/S29PL064J/S29PL032J  
31107A62 April 7, 2005  
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