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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
DQ3: Sector Erase Timer  
After writing a sector erase command sequence, the system may read DQ3 to determine  
whether or not erasure has begun. (The sector erase timer does not apply to the chip erase  
command.) If additional sectors are selected for erasure, the entire time-out also applies after  
each additional sector erase command. When the time-out period is complete, DQ3 switches  
from a 0 to a 1. If the time between additional sector erase commands from the system can  
be assumed to be less than 50 µs, the system need not monitor DQ3. See also Sector Erase  
Command Sequence‚ on page 57.  
After the sector erase command is written, the system should read the status of DQ7 (Data#  
Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence,  
and then read DQ3. If DQ3 is 1, the Embedded Erase algorithm has begun; all further com-  
mands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is 0,  
the device accepts additional sector erase commands. To ensure the command is accepted,  
the system software should check the status of DQ3 prior to and following each subsequent  
sector erase command. If DQ3 is high on the second status check, the last command might  
not have been accepted.  
Table 16 on page 72 shows the status of DQ3 relative to the other status bits.  
DQ1: Write-to-Buffer Abort  
DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1  
produces a 1. The system must issue the Write-to-Buffer-Abort-Reset command sequence to  
return the device to reading array data. See Write Buffer‚ on page 14 for more details.  
Table 16. Write Operation Status  
DQ7  
DQ5  
DQ2  
Status  
(Note 2)  
DQ6  
(Note 1)  
DQ3  
N/A  
1
(Note 2)  
DQ1  
0
RY/BY#  
Embedded Program Algorithm  
Embedded Erase Algorithm  
Program-Suspended  
DQ7#  
0
Toggle  
Toggle  
0
0
No toggle  
Toggle  
0
0
Standard  
Mode  
N/A  
Invalid (not allowed)  
Data  
1
1
1
1
0
Program  
Suspend  
Mode  
Program-  
Suspend  
Read  
Sector  
Non-Program  
Suspended Sector  
Erase-Suspended  
Sector  
1
No toggle  
Toggle  
0
N/A  
Toggle  
N/A  
N/A  
N/A  
Erase-  
Suspend  
Read  
Erase  
Suspend  
Mode  
Non-Erase  
Suspended Sector  
Data  
Erase-Suspend-Program  
(Embedded Program)  
DQ7#  
0
N/A  
Busy (Note 3)  
Abort (Note 4)  
DQ7#  
DQ7#  
Toggle  
Toggle  
0
0
N/A  
N/A  
N/A  
N/A  
0
1
0
0
Write-to-  
Buffer  
Notes:  
1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the  
maximum timing limits. Refer to the section on DQ5 for more information.  
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for  
further details.  
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.  
4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation  
72  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006  
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