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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL128N11TAIV10的Datasheet PDF文件第72页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第73页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第74页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第75页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第77页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第78页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第79页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第80页  
D a t a S h e e t  
DC Characteristics  
CMOS Compatible  
Parameter  
Symbol  
Parameter Description  
Test Conditions  
Min  
Typ  
Max  
Unit  
(Notes)  
WP/ACC: ±2.0  
Others: ±1.0  
35  
V
V
= V to V  
,
CC  
IN  
CC  
SS  
= V  
I
Input Load Current (1)  
µA  
LI  
CC max  
I
A9 Input Load Current  
Output Leakage Current  
V
= V  
; A9 = 12.5 V  
µA  
µA  
LIT  
CC  
CC max  
V
V
= V to V  
SS  
,
CC  
OUT  
CC  
I
±1.0  
20  
LO  
= V  
CC max  
CE# = V ; OE# = V , V = V  
f = 1 MHz, Byte Mode  
;
;
IL  
IH  
CC  
CCmax  
6
30  
60  
1
CE# = V ; OE# = V , V = V  
f = 5 MHz, Word Mode  
IL  
IH  
CC  
CCmax  
I
V
Active Read Current (1)  
50  
mA  
CC1  
CC  
CE# = V ; OE# = V , V = V  
f = 10 MHz  
;
IL  
IH  
CC  
CCmax  
CCmax  
90  
CE# = V ; OE# = V  
IL  
f = 10 MHz  
V
= V  
;
IH, CC  
10  
I
V
Intra-Page Read Current (1)  
mA  
CC2  
CC  
CE# = V , OE# = V , V = V  
f=33 MHz  
;
IL  
IH  
CC  
CCmax  
5
20  
90  
I
I
V
V
Active Erase/Program Current (2, 3) CE# = V OE# = V  
V
= V  
CCmax  
50  
mA  
µA  
CC3  
CC4  
CC  
IL,  
IH, CC  
V
V
= V  
; V = V ; OE# = V ;  
CCmax IO CC IH  
CC  
IL  
Standby Current  
Reset Current  
= V + 0.3 V / –0.1 V;  
1
1
5
5
CC  
SS  
CE#, RESET# = V ± 0.3 V  
CC  
V
V
= V  
; V = V  
;
CC  
CC  
IL  
CCmax  
IO  
I
I
V
= V + 0.3 V / –0.1 V;  
µA  
µA  
CC5  
CC6  
CC  
SS  
RESET# = V ± 0.3 V  
SS  
V
V
V
= V  
; V = V  
;
CC  
CC  
IH  
IL  
CCmax  
IO  
= V ± 0.3 V;  
CC  
Automatic Sleep Mode (4)  
1
5
= V + 0.3 V / –0.1 V;  
SS  
WP#/A = V  
CC  
IH  
WP#/ACC  
pin  
10  
50  
20  
90  
CE# = V OE# = V  
V
= V  
IL,  
IH, CC CCmax,  
I
ACC Accelerated Program Current  
mA  
ACC  
WP#/ACC = V  
IH  
V
pin  
CC  
V
Input Low Voltage (5)  
Input High Voltage (5)  
–0.1  
0.3 x V  
V
V
IL  
IO  
V
0.7 x V  
V
+ 0.3  
IO  
IH  
IO  
Voltage for ACC Erase/Program  
Acceleration  
V
V
V
= 2.7–3.6 V  
11.5  
12.5  
V
V
HH  
CC  
Voltage for Autoselect and Temporary  
Sector Unprotect  
V
= 2.7–3.6 V  
11.5  
12.5  
ID  
CC  
V
Output Low Voltage (5)  
Output High Voltage (5)  
I
I
= 100 µA  
= -100 µA  
0.15 x V  
V
V
V
OL  
OL  
IO  
V
0.85 x V  
2.3  
OH  
OH  
IO  
V
Low V Lock-Out Voltage (3)  
CC  
2.5  
LKO  
Notes:  
1. The I current listed is typically less than 2 mA/MHz, with OE# at V  
.
IH  
CC  
2.  
I
active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.  
CC  
3. Not 100% tested.  
4. Automatic sleep mode enables the lower power mode when addresses remain stable tor t  
+ 30 ns.  
ACC  
5.  
6.  
V
= 1.65–1.95 V or 2.7–3.6 V  
IO  
V
= 3 V and V = 3V or 1.8V. When V is at 1.8V, I/O pins cannot operate at 3V.  
CC  
IO  
IO  
74  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006  
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