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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL128N11TAIV10的Datasheet PDF文件第66页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第67页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第68页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第69页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第71页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第72页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第73页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第74页  
D a t a S h e e t  
START  
Read DQ15–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
No  
DQ5 = 1  
Yes  
Read DQ15–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
PASS  
FAIL  
Notes:  
1. VA = Valid address for programming. During a sector erase operation, a valid  
address is any sector address within the sector being erased. During chip erase, a  
valid address is any non-protected sector address.  
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simulta-  
neously with DQ5.  
Figure 5. Data# Polling Algorithm  
RY/BY#: Ready/Busy#  
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Al-  
gorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final  
WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY#  
pins can be tied together in parallel with a pull-up resistor to VCC.  
If the output is low (Busy), the device is actively erasing or programming. (This includes pro-  
gramming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read  
mode, the standby mode, or in the erase-suspend-read mode. Table 16 on page 72 shows  
the outputs for RY/BY#.  
68  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006  
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