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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Table 13. Sector Protection Commands (x16)  
Bus Cycles (Notes 14)  
First  
Second  
Third  
Fourth  
Fifth  
Sixth  
Seventh  
Command Sequence  
(Notes)  
Addr  
555  
XX  
Data  
AA  
Addr  
2AA  
XXX  
Data  
55  
Addr  
Data  
Addr Data Addr Data Addr Data Addr Data  
Command Set Entry (5)  
3
2
1
2
3
2
4
7
2
3
2
2
1
2
3
2
1
555  
40  
Lock  
Register  
Bits  
Program (6)  
A0  
Data  
Read (6)  
00  
XX  
Data  
90  
Command Set Exit (7)  
Command Set Entry (5)  
Program (8)  
XX  
2AA  
PWAx  
01  
00  
55  
555  
XX  
AA  
555  
60  
A0  
PWDx  
PWD1  
03  
Password  
Protection  
Read (9)  
XXX  
00  
PWD0  
25  
02  
00  
PWD2  
PWD0  
03  
01  
PWD3  
PWD1  
Unlock (10)  
00  
02  
PWD2  
03  
PWD3  
00  
29  
Command Set Exit (7)  
Command Set Entry (5)  
PPB Program (11)  
All PPB Erase (11, 12)  
PPB Status Read  
Command Set Exit (7)  
Command Set Entry (5)  
PPB Lock Bit Set  
XX  
90  
AA  
XX  
00  
555  
XX  
2AA  
SA  
55  
555  
C0  
A0  
00  
Non-Volatile  
Sector  
XX  
SA  
80  
00  
30  
Protection (PPB)  
RD(0)  
90  
XX  
XX  
2AA  
XX  
00  
55  
00  
Global  
Volatile Sector  
Protection  
Freeze  
555  
XX  
AA  
A0  
555  
555  
50  
E0  
PPB Lock Bit Status Read  
XXX  
RD(0)  
Command Set Exit (7)  
2
XX  
90  
XX  
00  
(PPB Lock)  
Command Set Entry (5)  
DYB Set  
3
2
2
1
2
555  
XX  
XX  
SA  
XX  
AA  
A0  
2AA  
SA  
55  
00  
01  
Volatile Sector  
Protection  
(DYB)  
DYB Clear  
A0  
SA  
DYB Status Read  
Command Set Exit (7)  
RD(0)  
90  
XX  
00  
Legend:  
X = Don’t care.  
RA = Address of the memory location to be read.  
SA = Sector Address. Any address that falls within a specified sector.  
See Tables 24 for sector address ranges.  
PWA = Password Address. Address bits A1 and A0 are used to select  
each 16-bit portion of the 64-bit entity.  
PWD = Password Data.  
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If  
unprotected, DQ0 = 1.  
Notes:  
1. All values are in hexadecimal.  
2. Shaded cells indicate read cycles.  
6. No unlock or command cycles required when bank is reading  
array data.  
7. Exit command must be issued to reset the device into read  
mode; device may otherwise be placed in an unknown state.  
3. Address and data bits not specified in table, legend, or notes are  
don’t cares (each hex digit implies 4 bits of data).  
4. Writing incorrect address and data values or writing them in the  
improper sequence may place the device in an unknown state.  
The system must write the reset command to return the device  
to reading array data.  
5. Entry commands are required to enter a specific mode to enable  
instructions only available within that mode.  
8. Entire two bus-cycle sequence must be entered for each portion  
of the password.  
9. Full address range is required for reading password.  
10. Password may be unlocked or read in any order. Unlocking  
requires the full password (all seven cycles).  
11. ACC must be at V when setting PPB or DYB.  
IH  
12. “All PPB Erase” command pre-programs all PPBs before erasure  
to prevent over-erasure.  
64  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006