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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Table 14. Memory Array Commands (x8)  
Bus Cycles (Notes 15)  
First  
Addr  
Second  
Third  
Addr  
Fourth  
Fifth  
Addr  
Sixth  
Addr  
Command Sequence  
(Notes)  
Data  
RD  
F0  
Addr  
Data  
Data  
Addr  
Data  
Data  
Data  
Asynchronous Read (6)  
Reset (7)  
1
1
4
6
4
4
1
4
6
1
3
3
2
2
2
2
6
6
1
1
3
4
1
4
RA  
XXX  
AAA  
AAA  
AAA  
AAA  
AA  
AAA  
AAA  
SA  
AAA  
AAA  
XXX  
XXX  
XXX  
XXX  
AAA  
AAA  
XXX  
XXX  
AAA  
AAA  
00  
Manufacturer ID  
AA  
AA  
AA  
AA  
98  
AA  
AA  
29  
AA  
AA  
A0  
80  
555  
555  
555  
555  
55  
55  
55  
55  
AAA  
AAA  
AAA  
AAA  
90  
90  
90  
90  
X00  
X02  
[SA]X04  
X06  
01  
Device ID (8)  
Sector Protect Verify (9)  
Secure Device Verify (10)  
XX7E  
Data  
Data  
X1C  
PA  
Data  
X1E  
Data  
CFI Query (11)  
Program  
555  
555  
55  
55  
AAA  
PA  
A0  
25  
PA  
SA  
PD  
Write to Buffer (12)  
Program Buffer to Flash  
Write to Buffer Abort Reset (13)  
Entry  
WC  
PD  
WBL  
PD  
PA  
555  
PA  
55  
55  
PD  
30  
10  
00  
55  
55  
555  
AAA  
F0  
20  
Program (14)  
Sector Erase (14)  
Chip Erase (14)  
Reset  
SA  
80  
SA  
90  
XXX  
555  
555  
Chip Erase  
AA  
AA  
B0  
30  
AAA  
AAA  
80  
80  
AAA  
AAA  
AA  
AA  
555  
555  
55  
55  
AAA  
SA  
10  
30  
Sector Erase  
Erase/Program Suspend (15)  
Erase/Program Resume (16)  
Entry  
AA  
AA  
Data  
AA  
555  
555  
55  
55  
AAA  
AAA  
88  
A0  
Program (17)  
Read (17)  
PA  
PD  
00  
Exit (17)  
AAA  
555  
55  
AAA  
90  
XXX  
Legend:  
X = Don’t care.  
RA = Read Address.  
RD = Read Data.  
PA = Program Address. Addresses latch on the falling edge of WE#  
or CE# pulse, whichever occurs later.  
PD = Program Data. Data latches on the rising edge of WE# or CE#  
pulse, whichever occurs first.  
SA = Sector Address. Any address that falls within a specified sector.  
See Tables 24 for sector address ranges.  
WBL = Write Buffer Location. Address must be within the same write  
buffer page as PA.  
WC = Word Count. Number of write buffer locations to load minus 1.  
Notes:  
1. See Table 1 on page 13 for description of bus operations.  
2. All values are in hexadecimal.  
11. Command is valid when device is ready to read array data or  
when device is in autoselect mode.  
12. Total number of cycles in the command sequence is determined  
by the number of words written to the write buffer.  
13. Command sequence resets device for next command after  
write-to-buffer operation.  
14. Requires Entry command sequence prior to execution. Unlock  
Bypass Reset command is required to return to reading array  
data.  
3. Shaded cells indicate read cycles.  
4. Address and data bits not specified in table, legend, or notes are  
don’t cares (each hex digit implies 4 bits of data).  
5. Writing incorrect address and data values or writing them in the  
improper sequence may place the device in an unknown state.  
The system must write the reset command to return reading  
array data.  
15. System may read and program in non-erasing sectors, or enter  
the autoselect mode, when in the Erase Suspend mode. The  
Erase Suspend command is valid only during a sector erase  
operation.  
16. Erase Resume command is valid only during the Erase Suspend  
mode.  
17. Requires Entry command sequence prior to execution. Secured  
Silicon Sector Exit Reset command is required to exit this mode;  
device may otherwise be placed in an unknown state.  
6. No unlock or command cycles required when bank is reading  
array data.  
7. Reset command is required to return to reading array data in  
certain cases. See Reset Command section for details.  
8. Data in cycles 5 and 6 are listed in Table 5 on page 37.  
9. The data is 00h for an unprotected sector and 01h for a  
protected sector. PPB Status Read provides the same data but in  
inverted form.  
10. If DQ7 = 1, region is factory serialized and protected. If DQ7 =  
0, region is unserialized and unprotected when shipped from  
factory. See Secured Silicon Sector Flash Memory Region on  
page 43 for more information.  
S29GL-N_00_B3 October 13, 2006  
S29GL-N MirrorBit™ Flash Family  
65