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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
tion. If that occurs, the chip erase command sequence should be reinitiated once the device  
has returned to reading array data, to ensure data integrity.  
Figure 4, on page 58 illustrates the algorithm for the erase operation. Note that the Secured  
Silicon Sector, autoselect, and CFI functions are unavailable when an erase opera-  
tion in is progress. Refer to the table Erase and Program Operations‚ on page 80 for  
parameters, and Figure 16, on page 82 section for timing diagrams.  
Sector Erase Command Sequence  
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by  
writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are  
written, and are then followed by the address of the sector to be erased, and the sector erase  
command. Table 12 on page 63 and Table 14 on page 65 shows the address and data require-  
ments for the sector erase command sequence.  
The device does not require the system to preprogram prior to erase. The Embedded Erase  
algorithm automatically programs and verifies the entire memory for an all zero data pattern  
prior to electrical erase. The system is not required to provide any controls or timings during  
these operations.  
After the command sequence is written, a sector erase time-out of 50 µs occurs. During the  
time-out period, additional sector addresses and sector erase commands may be written.  
Loading the sector erase buffer may be done in any sequence, and the number of sectors may  
be from one sector to all sectors. The time between these additional cycles must be less than  
50 µs, otherwise erasure may begin. Any sector erase address and command following the  
exceeded time-out may or may not be accepted. It is recommended that processor interrupts  
be disabled during this time to ensure all commands are accepted. The interrupts can be  
re-enabled after the last Sector Erase command is written. Any command other than Sec-  
tor Erase or Erase Suspend during the time-out period resets the device to the read  
mode. Note that the Secured Silicon Sector, autoselect, and CFI functions are un-  
available when an erase operation in is progress. The system must rewrite the  
command sequence and any additional addresses and commands.  
The system can monitor DQ3 to determine if the sector erase timer has timed out (See DQ3:  
Sector Erase Timer‚ on page 72.). The time-out begins from the rising edge of the final WE#  
pulse in the command sequence.  
When the Embedded Erase algorithm is complete, the device returns to reading array data  
and addresses are no longer latched. The system can determine the status of the erase op-  
eration by reading DQ7, DQ6, or DQ2 in the erasing sector. Refer to the Write Operation  
Status section for information on these status bits.  
Once the sector erase operation has begun, only the Erase Suspend command is valid. All  
other commands are ignored. However, note that a hardware reset immediately terminates  
the erase operation. If that occurs, the sector erase command sequence should be reinitiated  
once the device has returned to reading array data, to ensure data integrity.  
Figure 4, on page 58 illustrates the algorithm for the erase operation. Refer to the table Erase  
and Program Operations‚ on page 80 for parameters, and Figure 16, on page 82 for timing  
diagrams.  
S29GL-N_00_B3 October 13, 2006  
S29GL-N MirrorBit™ Flash Family  
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