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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
In the erase-suspend-read mode, the system can also issue the autoselect command se-  
quence. Refer to the Autoselect Mode‚ on page 37 section and Autoselect Command  
Sequence‚ on page 51 for details.  
To resume the sector erase operation, the system must write the Erase Resume command.  
The address of the erase-suspended sector is required when writing this command. Further  
writes of the Resume command are ignored. Another Erase Suspend command can be written  
after the chip has resumed erasing. It is important to allow an interval of at least 5 ms be-  
tween Erase Resume and Erase Suspend.  
Lock Register Command Set Definitions  
The Lock Register Command Set permits the user to one-time program the Secured Silicon  
Sector Protection Bit, Persistent Protection Mode Lock Bit, and Password Protection Mode Lock  
Bit. The Lock Register bits are all readable after an initial access delay.  
The Lock Register Command Set Entry command sequence must be issued prior to any  
of the following commands listed, to enable proper command execution.  
Note that issuing the Lock Register Command Set Entry command disables reads and  
writes for the flash memory.  
„ Lock Register Program Command  
„ Lock Register Read Command  
The Lock Register Command Set Exit command must be issued after the execution of the  
commands to reset the device to read mode. Otherwise the device hangs. If this happens,  
the flash device must be reset. Please refer to RESET# for more information. It is important  
to note that the device is in either Persistent Protection mode or Password Protection mode  
depending on the mode selected prior to the device hang.  
For either the Secured Silicon Sector to be locked, or the device to be permanently set to the  
Persistent Protection Mode or the Password Protection Mode, the associated Lock Register bits  
must be programmed. Note that only the Persistent Protection Mode Lock Bit or the Password  
Protection Mode Lock Bit can be programmed. The Lock Register Program operation aborts if  
there is an attempt to program both the Persistent Protection Mode and the Password Protec-  
tion Mode Lock bits.  
The Lock Register Command Set Exit command must be initiated to re-enable reads and  
writes to the main memory.  
Password Protection Command Set Definitions  
The Password Protection Command Set permits the user to program the 64-bit password, ver-  
ify the programming of the 64-bit password, and then later unlock the device by issuing the  
valid 64-bit password.  
The Password Protection Command Set Entry command sequence must be issued prior  
to any of the commands listed following to enable proper command execution.  
Note that issuing the Password Protection Command Set Entry command disabled  
reads and writes the main memory.  
„ Password Program Command  
„ Password Read Command  
„ Password Unlock Command  
The Password Program command permits programming the password that is used as part of  
the hardware protection scheme. The actual password is 64-bits long. There is no special ad-  
dressing order required for programming the password. The password is programmed in  
8-bit or 16-bit portions. Each portion requires a Password Program Command.  
S29GL-N_00_B3 October 13, 2006  
S29GL-N MirrorBit™ Flash Family  
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