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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Once the specified number of write buffer locations have been loaded, the system must then  
write the Program Buffer to Flash command at the sector address. Any other address and data  
combination aborts the Write Buffer Programming operation. The device then begins pro-  
gramming. Data polling should be used while monitoring the last address location loaded into  
the write buffer. DQ7, DQ6, DQ5, and DQ1 should be monitored to determine the device sta-  
tus during Write Buffer Programming.  
The write-buffer programming operation can be suspended using the standard program sus-  
pend/resume commands. Upon successful completion of the Write Buffer Programming  
operation, the device is ready to execute the next command.  
The Write Buffer Programming Sequence can be aborted in the following ways:  
„ Load a value that is greater than the page buffer size during the Number of Locations to  
Program step.  
„ Write to an address in a sector different than the one specified during the  
Write-Buffer-Load command.  
„ Write an Address/Data pair to a different write-buffer-page than the one selected by the  
Starting Address during the write buffer data loading stage of the operation.  
„ Write data other than the Confirm Command after the specified number of data load cy-  
cles.  
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location  
loaded), DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset command sequence must  
be written to reset the device for the next operation.  
Write buffer programming is allowed in any sequence. Note that the Secured Silicon sector,  
autoselect, and CFI functions are unavailable when a program operation is in progress. This  
flash device is capable of handling multiple write buffer programming operations on the same  
write buffer address range without intervening erases. Any bit in a write buffer address  
range cannot be programmed from 0 back to a 1. Attempting to do so may cause the  
device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was  
successful. However, a succeeding read shows that the data is still 0. Only erase operations  
can convert a 0 to a 1.  
Accelerated Program  
The device offers accelerated program operations through the WP#/ACC pin. When the sys-  
tem asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass  
mode. The system may then write the two-cycle Unlock Bypass program command sequence.  
The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that  
the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or  
device damage may result. WP# has an internal pullup; when unconnected, WP# is at VIH  
.
Figure 2, on page 55 illustrates the algorithm for the program operation. Refer to the Erase  
and Program Operations subsection of the “AC Characteristics” section on page 77 for param-  
eters, and Figure 14, on page 81 for timing diagrams.  
S29GL-N_00_B3 October 13, 2006  
S29GL-N MirrorBit™ Flash Family  
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