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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Command Definitions  
Writing specific address and data commands or sequences into the command register initiates  
device operations. Table 12 on page 63 and Table 14 on page 65 define the valid register  
command sequences. Writing incorrect address and data values or writing them in the im-  
proper sequence may place the device in an unknown state. A reset command is then  
required to return the device to reading array data.  
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data  
is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Char-  
acteristics section for timing diagrams.  
Reading Array Data  
The device is automatically set to reading array data after device power-up. No commands  
are required to retrieve data. The device is ready to read array data after completing an Em-  
bedded Program or Embedded Erase algorithm.  
After the device accepts an Erase Suspend command, the device enters the erase-sus-  
pend-read mode, after which the system can read data from any non-erase-suspended  
sector. After completing a programming operation in the Erase Suspend mode, the system  
may once again read array data with the same exception. See the Erase Suspend/Erase Re-  
sume Commands section for more information.  
The system must issue the reset command to return the device to the read (or erase-sus-  
pend-read) mode if DQ5 goes high during an active program or erase operation, or if the  
device is in the autoselect mode. See the next section, Reset Command, for more  
information.  
See also “Requirements for Reading Array Data” section on page 14 for more information.  
The Read-Only Operations subsection in the “AC Characteristics” section on page 77 section  
provides the read parameters, and Figure 11, on page 78 shows the timing diagram.  
Reset Command  
Writing the reset command resets the device to the read or erase-suspend-read mode. Ad-  
dress bits are don’t cares for this command.  
The reset command may be written between the sequence cycles in an erase command se-  
quence before erasing begins. This resets the device to the read mode. Once erasure begins,  
however, the device ignores reset commands until the operation is complete.  
The reset command may be written between the sequence cycles in a program command se-  
quence before programming begins. This resets the device to the read mode. If the program  
command sequence is written while the device is in the Erase Suspend mode, writing the  
reset command returns the device to the erase-suspend-read mode. Once programming be-  
gins, however, the device ignores reset commands until the operation is complete.  
The reset command may be written between the sequence cycles in an autoselect command  
sequence. Once in the autoselect mode, the reset command must be written to return to the  
read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writ-  
ing the reset command returns the device to the erase-suspend-read mode.  
If DQ5 goes high during a program or erase operation, writing the reset command returns the  
device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend).  
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must  
write the Write-to-Buffer-Abort Reset command sequence to reset the device for the next  
operation.  
50  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006