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S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
gram operation using the DQ7 or DQ6 status bits, just as in the standard word  
program operation. Refer to the Write Operation Status section for more  
information.  
In the erase-suspend-read mode, the system can also issue the autoselect com-  
mand sequence. Refer to the “Autoselect Mode” section on page 78 and  
“Autoselect Command Sequence” section on page 103 sections for details.  
To resume the sector erase operation, the system must write the Erase Resume  
command. Further writes of the Resume command are ignored. Another Erase  
Suspend command can be written after the chip has resumed erasing.  
Note: During an erase operation, this flash device performs multiple internal op-  
erations which are invisible to the system. When an erase operation is  
suspended, any of the internal operations that were not fully completed must be  
restarted. As such, if this flash device is continually issued suspend/resume com-  
mands in rapid succession, erase progress will be impeded as a function of the  
number of suspends. The result will be a longer cumulative erase time than with-  
out suspends. Note that the additional suspends do not affect device reliability or  
future performance. In most systems rapid erase/suspend activity occurs only  
briefly. In such cases, erase performance will not be significantly impacted.  
112  
S29GLxxxM MirrorBitTM Flash Family  
S29GLxxxM_00A5 April 30, 2004  
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