欢迎访问ic37.com |
会员登录 免费注册
发布采购

S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL256M10TAIR10的Datasheet PDF文件第109页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第110页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第111页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第112页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第114页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第115页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第116页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第117页  
P r e l i m i n a r y  
Command Definitions  
Table 31. Command Definitions (x16 Mode, BYTE# = VIH  
)
Bus Cycles (Notes 2–5)  
Command  
Sequence  
(Note 1)  
First  
Second  
Third  
Fourth  
Addr Data  
Fifth  
Sixth  
Addr Data  
Addr  
Data  
Addr  
Data  
Addr Data Addr Data  
Read (Note 6)  
Reset (Note 7)  
1
1
RA  
XXX  
555  
RD  
F0  
Manufacturer ID  
4
AA  
2AA  
2AA  
55  
55  
555  
555  
90  
90  
X00  
X01  
0001  
227E  
(Note  
18)  
(Note  
18)  
Device ID (Note 9)  
4
4
4
555  
555  
555  
AA  
AA  
AA  
X0E  
X0F  
SecSi‰ Sector Factory Protect  
(Note 10)  
2AA  
2AA  
55  
55  
555  
555  
90  
90  
X03  
(Note 10)  
00/01  
Sector Group Protect Verify (Note  
12)  
(SA)X02  
Enter SecSi Sector Region  
Exit SecSi Sector Region  
Program  
3
4
4
3
1
555  
555  
AA  
AA  
AA  
AA  
29  
2AA  
2AA  
2AA  
2AA  
55  
55  
55  
55  
555  
555  
555  
SA  
88  
90  
A0  
25  
XXX  
PA  
00  
PD  
555  
Write to Buffer (Note 11)  
Program Buffer to Flash  
Write to Buffer Abort Reset (Note 13)  
Unlock Bypass  
555  
SA  
WC  
PA  
PD  
WBL  
PD  
SA  
3
3
2
2
6
6
1
555  
AA  
AA  
A0  
90  
2AA  
2AA  
PA  
55  
55  
555  
555  
F0  
20  
555  
Unlock Bypass Program (Note 14)  
Unlock Bypass Reset (Note 15)  
Chip Erase  
XXX  
XXX  
555  
PD  
00  
55  
XXX  
2AA  
2AA  
AA  
AA  
B0  
555  
555  
80  
80  
555  
555  
AA  
AA  
2AA  
2AA  
55  
55  
555  
SA  
10  
Sector Erase  
555  
55  
30  
Program/Erase Suspend (Note 16)  
Program/Erase Resume (Note 17)  
CFI Query (Note 18)  
XXX  
XXX  
55  
1
30  
1
98  
Legend:  
X = Don’t care  
RA = Read Address of memory location to be read.  
PD = Program Data for location PA. Data latches on rising edge of  
WE# or CE# pulse, whichever happens first.  
SA = Sector Address of sector to be verified (in autoselect mode) or  
erased. Address bits A21–A15 uniquely select any sector.  
WBL = Write Buffer Location. Address must be within same write  
buffer page as PA.  
RD = Read Data read from location RA during read operation.  
PA = Program Address. Addresses latch on falling edge of WE# or  
CE# pulse, whichever happens later.  
WC = Word Count. Number of write buffer locations to load minus 1.  
Notes:  
1. See Table 1 for description of bus operations.  
10. Data is 00h for an unprotected sector group and 01h for a  
protected sector group.  
2. All values are in hexadecimal.  
11. Total number of cycles in command sequence is determined by  
number of words written to write buffer. Maximum number of  
cycles in command sequence is 21, including “Program Buffer to  
Flash” command.  
12. Command sequence resets device for next command after  
aborted write-to-buffer operation.  
13. Unlock Bypass command is required prior to Unlock Bypass  
Program command.  
14. Unlock Bypass Reset command is required to return to read  
mode when device is in unlock bypass mode.  
3. Shaded cells indicate read cycles. All others are write cycles.  
4. During unlock and command cycles, when lower address bits are  
555 or 2AA as shown in table, address bits above A11 and data  
bits above DQ7 are don’t care.  
5. No unlock or command cycles required when device is in read  
mode.  
6. Reset command is required to return to read mode (or to erase-  
suspend-read mode if previously in Erase Suspend) when device  
is in autoselect mode, or if DQ5 goes high while device is  
providing status information.  
15. System may read and program in non-erasing sectors, or enter  
autoselect mode, when in Erase Suspend mode. Erase Suspend  
command is valid only during a sector erase operation.  
16. Erase Resume command is valid only during Erase Suspend  
mode.  
7. Fourth cycle of the autoselect command sequence is a read  
cycle. Data bits DQ15–DQ8 are don’t care. Except for RD, PD  
and WC. See Autoselect Command Sequence section for more  
information.  
8. Device ID must be read in three cycles.  
17. Command is valid when device is ready to read array data or  
when device is in autoselect mode.  
18. Refer to Table 14, AutoSelect Codes for individual Device IDs  
per device density and model number.  
9. If WP# protects highest address sector, data is 98h for factory  
locked and 18h for not factory locked. If WP# protects lowest  
address sector, data is 88h for factory locked and 08h for not  
factor locked.  
April 30, 2004 S29GLxxxM_00A5  
S29GLxxxM MirrorBitTM Flash Family  
113  
 复制成功!