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S25FL040A0LVFI001 参数 Datasheet PDF下载

S25FL040A0LVFI001图片预览
型号: S25FL040A0LVFI001
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位CMOS 3.0伏闪存与50MHz的SPI (串行外设接口)总线和小部门的引导和参数存储 [4 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus and Small Sector for Boot and Parameter Storage]
分类和应用: 闪存存储
文件页数/大小: 35 页 / 1040 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
When CS# is driven high, the device transitions from DP mode to the standby mode after a delay of tRES, as  
previously described. The RES command always provides access to the Electronic Signature of the device  
and can be applied even if DP mode has not been entered.  
Any RES command issued while an erase, program, or WRSR operation is in progress not executed, and the  
operation continues uninterrupted.  
Figure 9.14 Release from Deep Power Down and  
Read Electronic Signature (RES) Command Sequence  
CS#  
SCK  
2
28 29 30  
31 32 33 34  
1
8
36 37  
9
35  
38  
0
3
4
5
6
7
10  
t
RES  
3 Dummy Bytes  
Command  
SI  
3
1
0
2
23 22  
MSB  
21  
Hi-Z  
7
6
5
4
3
2
1
SO  
0
MSB  
Electronic ID out  
Standby Mode  
Deep Power-down Mode  
Table 9.5 Command Definitions  
One-Byte  
Address  
Bytes  
Dummy  
Byte  
Operation  
Command  
READ  
Description  
Command Code  
03H (0000 0011)  
0BH (0000 1011)  
9FH (1001 1111)  
Data Bytes  
Read Data Bytes  
3
3
0
0
1
0
1 to  
1 to ∞  
1 to 3  
FAST_READ  
RDID  
Read Data Bytes at Higher Speed  
Read Identification (Note 1)  
Read  
Read Manufacture and  
Device Identification (Note 1)  
READ_ID  
90H (1001 0000)  
3
0
1 to ∞  
WREN  
WRDI  
SE  
Write Enable  
06H (0000 0110)  
04H (0000 0100)  
D8H (1101 1000)  
C7H (1100 0111)  
02H (0000 0010)  
05H (0000 0101)  
01H (0000 0001)  
B9H (1011 1001)  
ABH (1010 1011)  
0
0
3
0
3
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Write Control  
Write Disable  
0
Sector Erase  
0
Erase  
Program  
BE  
Bulk (Chip) Erase  
Page Program  
0
PP  
1 to 256  
RDSR  
WRSR  
DP  
Read from Status Register  
Write to Status Register  
Deep Power Down  
Release from Deep Power Down  
1 to ∞  
Status Register  
1
0
0
Power Saving  
RES  
Release from Deep Power Down and  
Read Electronic Signature (Note 2)  
ABH (1010 1011)  
0
3
1 to ∞  
Notes  
1. The S25FL040A has a manufacturer ID of 01h, and a device ID consisting of the memory type (02h) and the memory capacity (12h for uniform sector, 25h for  
top boot, 26h for bottom boot).  
2. The S25FL040A has an Electronic Signature ID of 12h.  
10. Power-up and Power-down  
During power-up and power-down, certain conditions must be observed. CS# must follow the voltage applied  
on VCC, and must not be driven low to select the device until VCC reaches the allowable values as follows  
(see Figure 10.1 and Table 10.1):  
„ At power-up, VCC (min) plus a period of tPU  
„ At power-down, VSS  
24  
S25FL040A  
S25FL040A_00_B0 August 31, 2006