MBM29DL32XTE/BE80/90
■ AC CHARACTERISTICS
Value (Note)
Test
setup
Symbol
Parameter
80
90
Unit
JEDEC
tAVAV
Standard
Min
Max
Min
Max
Read Cycle Time
tRC
80
90
ns
ns
CE = VIL
OE = VIL
Address to Output Delay
tAVQV
tACC
80
90
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
tELQV
tGLQV
tEHQZ
tGHQZ
tCE
tOE
tDF
tDF
OE = VIL
80
30
25
25
90
35
30
30
ns
ns
ns
ns
Output Hold Time from Addresses,
CE or OE, Whichever Occurs First
tAXQX
tOH
0
0
ns
µs
ns
RESET Pin Low to Read Mode
tREADY
20
5
20
5
tELFL
tELFH
CE to BYTE Switching Low or High
Note : Test Conditions :
Output Load : 1 TTL gate and 30 pF (MBM29DL32XTE/BE80)
1 TTL gate and 100 pF (MBM29DL32XTE/BE90)
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V or 3.0 V
Timing measurement reference level
Input : 1.5 V
Output : 1.5 V
3.3 V
Diode = 1N3064
or Equivalent
2.7 kΩ
Device
Under
Test
6.2 kΩ
CL
Diode = 1N3064
or Equivalent
Notes : • CL = 30 pF including jig capacitance (MB29DL32XTE/BE80)
• CL = 100 pF including jig capacitance (MB29DL32XTE/BE90)
Test Conditions
53
SPANSION [ SPANSION ]
