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MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
 浏览型号MBM29DL324TE90TN的Datasheet PDF文件第50页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第51页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第52页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第53页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第55页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第56页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第57页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第58页  
MBM29DL32XTE/BE80/90  
Write/Erase/Program Operations  
Value  
Symbol  
Parameter  
80  
90  
Unit  
Standard  
JEDEC  
tAVAV  
tAVWL  
Min Typ Max Min Typ Max  
Write Cycle Time  
tWC  
tAS  
80  
0
90  
0
ns  
ns  
Address Setup Time  
Address Setup Time to OE Low During  
Toggle Bit Polling  
tASO  
tAH  
12  
45  
0
15  
45  
0
ns  
ns  
ns  
Address Hold Time  
tWLAX  
Address Hold Time from CE or OE High  
During Toggle Bit Polling  
tAHT  
Data Setup Time  
Data Hold Time  
tDVWH  
tWHDX  
tDS  
tDH  
30  
0
35  
0
ns  
ns  
Read  
0
0
ns  
Output Enable  
Hold Time  
tOEH  
Toggle and Data Polling  
10  
20  
20  
0
10  
20  
20  
0
ns  
CE High During Toggle Bit Polling  
OE High During Toggle Bit Polling  
Read Recover Time Before Write  
Read Recover Time Before Write  
CE Setup Time  
tCEPH  
tOEPH  
tGHWL  
tGHEL  
tCS  
ns  
ns  
tGHWL  
tGHEL  
tELWL  
tWLEL  
tWHEH  
tEHWH  
tWLWH  
tELEH  
tWHWL  
tEHEL  
ns  
0
0
ns  
0
0
ns  
WE Setup Time  
tWS  
0
0
ns  
CE Hold Time  
tCH  
0
0
ns  
WE Hold Time  
tWH  
0
0
ns  
Write Pulse Width  
tWP  
35  
35  
25  
25  
35  
35  
30  
30  
ns  
CE Pulse Width  
tCP  
ns  
Write Pulse Width High  
CE Pulse Width High  
tWPH  
tCPH  
ns  
ns  
Byte  
8
16  
1
8
16  
1
µs  
Programming  
Operation  
tWHWH1  
tWHWH1  
Word  
µs  
Sector Erase Operation*1  
tWHWH2  
tWHWH2  
tVCS  
s
VCC Setup Time  
50  
500  
500  
4
50  
500  
500  
4
µs  
Rise Time to VID*2  
Rise Time to VACC*3  
tVIDR  
tVACCR  
tVLHT  
tWPP  
tOESP  
tCSP  
ns  
ns  
Voltage Transition Time*2  
Write Pulse Width*2  
OE Setup Time to WE Active*2  
CE Setup Time to WE Active*2  
Recover Time from RY/BY  
RESET Pulse Width  
µs  
100  
4
100  
4
µs  
µs  
4
4
µs  
ns  
tRB  
0
0
tRP  
500  
500  
ns  
(Continued)  
54  
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