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AM29DL640H70WHI 参数 Datasheet PDF下载

AM29DL640H70WHI图片预览
型号: AM29DL640H70WHI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8M ×8位/ 4米x 16位) CMOS 3.0伏只,同步读/写闪存 [64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 54 页 / 1243 K
品牌: SPANSION [ SPANSION ]
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curs, the chip erase command sequence should be  
reinitiated once that bank has returned to reading  
array data, to ensure data integrity. Note that the Se-  
cured Silicon Sector, autoselect, and CFI functions are  
unavailable when an erase operation is in progress.  
START  
Figure 5 illustrates the algorithm for the erase opera-  
tion. Refer to the Erase and Program Operations ta-  
bles in the AC Characteristics section for parameters,  
and Figure 20 section for timing diagrams.  
Write Program  
Command Sequence  
Sector Erase Command Sequence  
Data Poll  
from System  
Sector erase is a six bus cycle operation. The sector  
erase command sequence is initiated by writing two  
unlock cycles, followed by a set-up command. Two ad-  
ditional unlock cycles are written, and are then fol-  
lowed by the address of the sector to be erased, and  
the sector erase command. Table 12 shows the ad-  
dress and data requirements for the sector erase com-  
mand sequence.  
Embedded  
Program  
algorithm  
in progress  
Verify Data?  
Yes  
No  
The device does not require the system to preprogram  
prior to erase. The Embedded Erase algorithm auto-  
matically programs and verifies the entire sector for an  
all zero data pattern prior to electrical erase. The sys-  
tem is not required to provide any controls or timings  
during these operations.  
No  
Increment Address  
Last Address?  
Yes  
Programming  
Completed  
After the command sequence is written, a sector erase  
time-out of 80 µs occurs. During the time-out period,  
additional sector addresses and sector erase com-  
mands may be written. Loading the sector erase buffer  
may be done in any sequence, and the number of sec-  
tors may be from one sector to all sectors. The time  
between these additional cycles must be less than 80  
µs, otherwise erasure may begin. Any sector erase ad-  
dress and command following the exceeded time-out  
may or may not be accepted. It is recommended that  
processor interrupts be disabled during this time to en-  
sure all commands are accepted. The interrupts can  
be re-enabled after the last Sector Erase command is  
written. Any command other than Sector Erase or  
Erase Suspend during the time-out period resets  
that bank to the read mode. The system must rewrite  
the command sequence and any additional addresses  
and commands.  
Note: See Table 12 for program command sequence.  
Figure 4. Program Operation  
Chip Erase Command Sequence  
Chip erase is a six bus cycle operation. The chip erase  
command sequence is initiated by writing two unlock  
cycles, followed by a set-up command. Two additional  
unlock write cycles are then followed by the chip erase  
command, which in turn invokes the Embedded Erase  
algorithm. The device does not require the system to  
preprogram prior to erase. The Embedded Erase algo-  
rithm automatically preprograms and verifies the entire  
memory for an all zero data pattern prior to electrical  
erase. The system is not required to provide any con-  
trols or timings during these operations. Table 12  
shows the address and data requirements for the chip  
erase command sequence.  
The system can monitor DQ3 to determine if the sec-  
tor erase timer has timed out (See the section on DQ3:  
Sector Erase Timer.). The time-out begins from the ris-  
ing edge of the final WE# or CE# pulse (first rising  
edge) in the command sequence.  
When the Embedded Erase algorithm is complete,  
that bank returns to the read mode and addresses are  
no longer latched. The system can determine the sta-  
tus of the erase operation by using DQ7, DQ6, DQ2,  
or RY/BY#. Refer to the Write Operation Status sec-  
tion for information on these status bits.  
When the Embedded Erase algorithm is complete, the  
bank returns to reading array data and addresses are  
no longer latched. Note that while the Embedded  
Erase operation is in progress, the system can read  
data from the non-erasing bank. The system can de-  
termine the status of the erase operation by reading  
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer  
Any commands written during the chip erase operation  
are ignored. However, note that a hardware reset im-  
mediately terminates the erase operation. If that oc-  
June 7, 2005  
Am29DL640H  
25  
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