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AM29DL640H70WHI 参数 Datasheet PDF下载

AM29DL640H70WHI图片预览
型号: AM29DL640H70WHI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8M ×8位/ 4米x 16位) CMOS 3.0伏只,同步读/写闪存 [64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 54 页 / 1243 K
品牌: SPANSION [ SPANSION ]
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to the Write Operation Status section for information  
on these status bits.  
data from, or program data to, any sector not selected  
for erasure. The bank address is required when writing  
this command. This command is valid only during the  
sector erase operation, including the 80 µs time-out  
period during the sector erase command sequence.  
The Erase Suspend command is ignored if written dur-  
ing the chip erase operation or Embedded Program  
algorithm. The bank address must contain one of the  
sectors currently selected for erase.  
Once the sector erase operation has begun, only the  
Erase Suspend command is valid. All other com-  
mands are ignored. However, note that a hardware  
reset immediately terminates the erase operation. If  
that occurs, the sector erase command sequence  
should be reinitiated once that bank has returned to  
reading array data, to ensure data integrity. Note that  
the Secured Silicon Sector, autoselect, and CFI func-  
tions are unavailable when an erase operation is in  
progress.  
When the Erase Suspend command is written during  
the sector erase operation, the device requires a max-  
imum of 20 µs to suspend the erase operation. How-  
ever, when the Erase Suspend command is written  
during the sector erase time-out, the device immedi-  
ately terminates the time-out period and suspends the  
erase operation.  
Figure 5 illustrates the algorithm for the erase opera-  
tion. Refer to the Erase and Program Operations ta-  
bles in the AC Characteristics section for parameters,  
and Figure 20 section for timing diagrams.  
After the erase operation has been suspended, the  
bank enters the erase-suspend-read mode. The sys-  
tem can read data from or program data to any sector  
not selected for erasure. (The device “erase sus-  
pends” all sectors selected for erasure.) Reading at  
any address within erase-suspended sectors pro-  
duces status information on DQ7–DQ0. The system  
can use DQ7, or DQ6 and DQ2 together, to determine  
if a sector is actively erasing or is erase-suspended.  
Refer to the Write Operation Status section for infor-  
mation on these status bits.  
START  
Write Erase  
Command Sequence  
(Notes 1, 2)  
After an erase-suspended program operation is com-  
plete, the bank returns to the erase-suspend-read  
mode. The system can determine the status of the  
program operation using the DQ7 or DQ6 status bits,  
just as in the standard Byte Program operation.  
Refer to the Write Operation Status section for more  
information.  
Data Poll to Erasing  
Bank from System  
Embedded  
Erase  
algorithm  
in progress  
No  
Data = FFh?  
In the erase-suspend-read mode, the system can also  
issue the autoselect command sequence. The device  
allows reading autoselect codes even at addresses  
within erasing sectors, since the codes are not stored  
in the memory array. When the device exits the au-  
toselect mode, the device reverts to the Erase Sus-  
pend mode, and is ready for another valid operation.  
Refer to the Autoselect Mode and Autoselect Com-  
mand Sequence sections for details.  
Yes  
Erasure Completed  
Notes:  
1. See Table 12 for erase command sequence.  
2. See the section on DQ3 for information on the sector  
erase timer.  
To resume the sector erase operation, the system  
must write the Erase Resume command. The bank  
address of the erase-suspended bank is required  
when writing this command. Further writes of the Re-  
sume command are ignored. Another Erase Suspend  
command can be written after the chip has resumed  
erasing.  
Figure 5. Erase Operation  
Erase Suspend/Erase Resume  
Commands  
The Erase Suspend command, B0h, allows the sys-  
tem to interrupt a sector erase operation and then read  
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Am29DL640H  
June 7, 2005  
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