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AM29DL640H70WHI 参数 Datasheet PDF下载

AM29DL640H70WHI图片预览
型号: AM29DL640H70WHI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8M ×8位/ 4米x 16位) CMOS 3.0伏只,同步读/写闪存 [64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 54 页 / 1243 K
品牌: SPANSION [ SPANSION ]
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Table 10. Device Geometry Definition  
Addresses  
Addresses  
(Word Mode)  
(Byte Mode)  
Data  
Description  
27h  
4Eh  
0017h  
Device Size = 2N byte  
28h  
29h  
50h  
52h  
0002h  
0000h  
Flash Device Interface description (refer to CFI publication 100)  
2Ah  
2Bh  
54h  
56h  
0000h  
0000h  
Max. number of byte in multi-byte write = 2N  
(00h = not supported)  
2Ch  
58h  
0003h  
Number of Erase Block Regions within device  
2Dh  
2Eh  
2Fh  
30h  
5Ah  
5Ch  
5Eh  
60h  
0007h  
0000h  
0020h  
0000h  
Erase Block Region 1 Information  
(refer to the CFI specification or CFI publication 100)  
31h  
32h  
33h  
34h  
62h  
64h  
66h  
68h  
007Dh  
0000h  
0000h  
0001h  
Erase Block Region 2 Information  
(refer to the CFI specification or CFI publication 100)  
35h  
36h  
37h  
38h  
6Ah  
6Ch  
6Eh  
70h  
0007h  
0000h  
0020h  
0000h  
Erase Block Region 3 Information  
(refer to the CFI specification or CFI publication 100)  
39h  
3Ah  
3Bh  
3Ch  
72h  
74h  
76h  
78h  
0000h  
0000h  
0000h  
0000h  
Erase Block Region 4 Information  
(refer to the CFI specification or CFI publication 100)  
June 7, 2005  
Am29DL640H  
21  
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