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STK10C68-5S25 参数 Datasheet PDF下载

STK10C68-5S25图片预览
型号: STK10C68-5S25
PDF下载: 下载PDF文件 查看货源
内容描述: 8K ×8的nvSRAM QuantumTrap⑩ CMOS非易失性静态RAM [8K x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 471 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK10C68  
MODE SELECTION  
E
H
L
L
L
L
W
X
H
L
G
X
L
NE  
X
MODE  
POWER  
Standby  
Active  
Not Selected  
H
H
L
Read SRAM  
X
L
Write SRAM  
Active  
l
H
L
Nonvolatile RECALL  
Nonvolatile STORE  
Active  
H
L
I
CC  
2
L
L
L
H
L
H
L
X
No Operation  
Active  
Note l: An automatic RECALL takes place at power up, starting when VCC exceeds 4.25V and taking tRESTORE  
.
STORE CYCLES #1 & #2  
(V = 5.0V 10%)  
CC  
SYMBOLS  
NO.  
PARAMETER  
MIN  
MAX  
UNITS  
#1  
#2  
Alt.  
m
n
26  
27  
28  
29  
30  
31  
32  
t
t
t
t
t
t
STORE Cycle Time  
10  
ms  
ns  
ns  
ns  
ns  
ns  
ns  
WLQX  
WLNH  
ELQX  
ELNH  
STORE  
WC  
STORE Initiation Cycle Time  
Output Disable Set-up to NE Fall  
Output Disable Set-up to E Fall  
NE Set-up  
20  
0
tGHNL  
t
t
0
GHEL  
t
t
0
NLWL  
NLEL  
Chip Enable Set-up  
0
ELWL  
t
Write Enable Set-up  
0
WLEL  
Note m: Measured with W and NE both returned high, and G returned low. STORE cycles are inhibited below 4.0V.  
Note n: Once tWC has been satisfied by NE, G, W and E, the STORE cycle is completed automatically. Any of NE, G, W or E may be used to terminate  
the STORE initiation cycle.  
Note o: If E is low for any period of time in which W is high while G and NE are low, then a RECALL cycle may be initiated.  
o
STORE CYCLE #1: W Controlled  
NE  
28  
GHNL  
30  
NLWL  
27  
WLNH  
G
t
t
t
W
31  
ELWL  
t
E
26  
WLQX  
t
HIGH IMPEDANCE  
DQ (DATA OUT)  
o
STORE CYCLE #2: E Controlled  
30  
t
NLEL  
NE  
29  
GHEL  
t
G
32  
WLEL  
t
W
E
27  
ELNH  
t
26  
ELQX  
t
HIGH IMPEDANCE  
DQ (DATA OUT)  
March 2006  
6
Document Control # ML0006 rev 0.2  
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