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STK10C68-5S25 参数 Datasheet PDF下载

STK10C68-5S25图片预览
型号: STK10C68-5S25
PDF下载: 下载PDF文件 查看货源
内容描述: 8K ×8的nvSRAM QuantumTrap⑩ CMOS非易失性静态RAM [8K x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 471 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK10C68  
RECALL CYCLES #1, #2 & #3  
(V = 5.0V 10%)  
CC  
SYMBOLS  
NO.  
PARAMETER  
MIN  
MAX  
UNITS  
#1  
#2  
#3  
p
33  
34  
35  
36  
37  
38  
39  
40  
t
t
t
t
t
t
t
t
t
t
t
RECALL Cycle Time  
20  
μs  
ns  
ns  
ns  
ns  
ns  
ns  
μs  
NLQX  
ELQXR  
ELNHR  
NLEL  
GLQXR  
GLNH  
NLGL  
q
RECALL Initiation Cycle Time  
NE Set-up  
20  
0
NLNH  
tGLNL  
Output Enable Set-up  
Write Enable Set-up  
0
GLEL  
t
t
t
t
t
t
0
WHNL  
ELNL  
NLQZ  
WHEL  
GLEL  
WHGL  
Chip Enable Set-up  
0
ELGL  
NE Fall to Outputs Inactive  
Power-up RECALL Duration  
20  
550  
RESTORE  
Note p: Measured with W and NE both high, and G and E low.  
Note q: Once tNLNH has been satisfied by NE, G, W and E, the RECALL cycle is completed automatically. Any of NE, G or E may be used to terminate  
the RECALL initiation cycle.  
Note r: If W is low at any point in which both E and NE are low and G is high, then a STORE cycle will be initiated instead of a RECALL.  
o
RECALL CYCLE #1: NE Controlled  
34  
NLNH  
t
NE  
G
36  
GLNL  
t
W
E
37  
WHNL  
t
38  
ELNL  
33  
NLQX  
t
t
39  
NLQZ  
t
HIGH IMPEDANCE  
DQ (DATA OUT)  
o
RECALL CYCLE #2: E Controlled  
35  
t
NLEL  
NE  
36  
GLEL  
t
G
W
E
37  
WHEL  
34  
ELNHR  
t
t
33  
ELQXR  
t
HIGH IMPEDANCE  
DQ (DATA OUT)  
,
RECALL CYCLE #3: G Controlledo r  
35  
NLGL  
t
NE  
G
34  
GLNH  
t
37  
WHGL  
t
W
E
38  
ELGL  
t
33  
GLQXR  
t
HIGH IMPEDANCE  
DQ (DATA OUT)  
March 2006  
7
Document Control # ML0006 rev 0.2  
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