Si1000/1/2/3/4/5
Table 4.19. Transmitter AC Electrical Characteristics1
Parameter
Symbol
Conditions
Min
240
Typ
—
Max Units
TX Frequency Range
F
960
256
40
MHz
kbps
kbps
kHz
TX
2
FSK Data Rate
DR
0.123
0.123
±0.625
±0.625
—
—
FSK
2
OOK Data Rate
DR
—
OOK
Modulation Deviation
Δf1
Δf2
Δf
860–960 MHz
240–860 MHz
±320
±160
—
kHz
Modulation Deviation
0.625
—
kHz
RES
2
Resolution
Output Power Range—
P
P
+1
–4
+20
+13
dBm
dBm
TX
TX
3
Si1000/1
Output Power Range—
—
3
Si1002/3
2
TX RF Output Steps
P
P
controlled by txpow[2:0]
—
—
3
2
—
—
dB
dB
RF_OUT
2
TX RF Output Level
–40 to +85 C
RF_TEMP
Variation vs. Temperature
TX RF Output Level
Variation vs. Frequency
P
Measured across any one
frequency band
—
—
1
—
—
dB
RF_FREQ
2
Transmit Modulation
B*T
Gaussian Filtering Bandwith
0.5
2
Filtering
Time
Product
2
Spurious Emissions
P
P
P
= 11 dBm,
OUT
Frequencies <1 GHz
—
—
—
—
–54
–54
dBm
dBm
OB-TX1
OB-TX2
1–12.75 GHz, excluding
harmonics
2
Harmonics
P
P
Using reference design TX
matching network and filter
with max output power. Har-
monics reduce linearly with
output power.
—
—
—
—
–42
–42
dBm
dBm
2HARM
3HARM
Notes:
1. All specification guaranteed by production test unless otherwise noted. Production test conditions and max
limits are listed in the "Production Test Conditions" section on page 73.
2. Guaranteed by qualification. Qualification test conditions are listed in the "Production Test Conditions" section
on page 73.
3. Output power is dependent on matching components, board layout, and is measured at the pin.
Rev. 1.0
69
SILICON [ SILICON ]
