C8051F52x-53x
2. Absolute Maximum Ratings
Table 2.1. Absolute Maximum Ratings
Parameter
Ambient temperature under bias
Storage Temperature
Conditions Min
Typ
—
Max
125
150
5.5
Units
°C
–40
–65
–0.3
—
°C
Voltage on V
with respect to GND
—
V
REGIN
Voltage on V with respect to GND
–0.3
–0.3
–0.3
–0.3
—
—
—
—
2.8
V
V
V
V
DD
Voltage on XTAL1 with respect to GND
V
V
+ 0.3
DD
DD
Voltage on XTAL2 with respect to GND
+ 0.3
+ 0.3
Voltage on any Port I/O Pin or RST with respect to GND
V
REGIN
Maximum output current sunk by any Port pin
Maximum output current sourced by any Port pin
—
—
—
—
—
—
100
mA
mA
mA
100
500
Maximum Total current through V
, and GND
REGIN
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the devices at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Rev. 0.3
29
SILICON [ SILICON ]
