C8051F50x-F51x
Table 5.10. Temperature Sensor Electrical Characteristics
VDDA = 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
Parameter
Conditions
Min
—
Typ
±0.1
3.33
±100
856
±14
21
Max
—
Units
°C
Linearity
Slope
—
—
mV/°C
µV/°C
mV
Slope Error*
Offset
—
—
Temp = 0 °C
Temp = 0 °C
—
—
Offset Error*
Power Supply Current
Tracking Time
—
—
mV
—
—
µA
12
—
—
µs
*Note: Represents one standard deviation from the mean.
Table 5.11. Voltage Reference Electrical Characteristics
VDDA = 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
Parameter
Conditions
Min
Typ
Max
Units
Internal Reference (REFBE = 1)
Output Voltage
25 °C ambient (REFLV = 0)
1.45
1.50
2.20
1.55
2.25
V
25 °C ambient (REFLV = 1), V = 2.6 V 2.15
DD
VREF Short-Circuit Current
—
—
5
10
—
mA
VREF Temperature
33
ppm/°C
Coefficient
Power Consumption
Load Regulation
Internal
—
—
—
—
—
30
3
50
—
—
—
—
µA
µV/µA
ms
Load = 0 to 200 µA to AGND
4.7 µF and 0.1 µF bypass
0.1 µF bypass
VREF Turn-on Time 1
VREF Turn-on Time 2
Power Supply Rejection
1.5
46
1.3
µs
mV/V
External Reference (REFBE = 0)
Input Voltage Range
1.5
—
—
V
V
DDA
Input Current
Sample Rate = 200 ksps; VREF = 1.5 V
2.2
—
µA
Power Specifications
Reference Bias Generator REFBE = 1 or TEMPE = 1
—
21
40
µA
50
Rev. 1.1
SILICON [ SILICON ]
